-
1
-
-
84916389355
-
Large-signal analysis of a silicon read diode oscillator
-
Jan.
-
O. L. Scharfetter and H. K. Gummel, "Large-signal analysis of a silicon read diode oscillator," IEEE Trans. Electron Devices, vol. ED-16, pp. 64-77, Jan. 1969.
-
(1969)
IEEE Trans. Electron Devices
, vol.ED-16
, pp. 64-77
-
-
Scharfetter, O.L.1
Gummel, H.K.2
-
2
-
-
36149018649
-
Diffusion of hot and cold electrons in semiconductor barriers
-
R. Stratton, "Diffusion of hot and cold electrons in semiconductor barriers," Phys. Rev., vol. 126, no. 6, pp. 2002-2014, 1962.
-
(1962)
Phys. Rev.
, vol.126
, Issue.6
, pp. 2002-2014
-
-
Stratton, R.1
-
3
-
-
0014705867
-
Transport equations for electrons in two-valley semiconductors
-
Jan.
-
K. Bløtekjær, "Transport equations for electrons in two-valley semiconductors," IEEE Trans. Electron Devices, vol. ED-17, pp. 38-47, Jan. 1970.
-
(1970)
IEEE Trans. Electron Devices
, vol.ED-17
, pp. 38-47
-
-
Bløtekjær, K.1
-
5
-
-
0025512595
-
Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling
-
Nov.
-
G. K. Wachutka, "Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling," IEEE Trans. Computer-Aided Design, vol. 9, pp. 1141-1149, Nov. 1990.
-
(1990)
IEEE Trans. Computer-aided Design
, vol.9
, pp. 1141-1149
-
-
Wachutka, G.K.1
-
7
-
-
0029393178
-
Impact ionization and distribution functions in sub-micron nMOSFET technologies
-
Oct.
-
J. D. Bude and M. Mastrapasqua, "Impact ionization and distribution functions in sub-micron nMOSFET technologies," IEEE Electron Device Lett., vol. 16, pp. 439-441, Oct. 1995.
-
(1995)
IEEE Electron Device Lett.
, vol.16
, pp. 439-441
-
-
Bude, J.D.1
Mastrapasqua, M.2
-
8
-
-
0024011306
-
The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors
-
May
-
B. Meinerzhagen and W. L. Engl, "The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors," IEEE Trans. Electron Devices, vol. 35, pp. 689-697, May 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, pp. 689-697
-
-
Meinerzhagen, B.1
Engl, W.L.2
-
11
-
-
0006331787
-
Generalized energy-momentum conservation equation in the relaxation time approximation
-
Sept.
-
E. M. Azoff, "Generalized energy-momentum conservation equation in the relaxation time approximation," Solid-State Electron., vol. 30, pp. 913-917, Sept. 1987.
-
(1987)
Solid-state Electron.
, vol.30
, pp. 913-917
-
-
Azoff, E.M.1
-
13
-
-
0031647347
-
Modeling electron and hole transport with full-band structure effects by means of the spherical-harmonics expansion of the BTE
-
Jan.
-
M. C. Vecchi and M. Rudan, "Modeling electron and hole transport with full-band structure effects by means of the spherical-harmonics expansion of the BTE," IEEE Trans. Electron Devices, vol. 45, pp. 230-238, Jan. 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 230-238
-
-
Vecchi, M.C.1
Rudan, M.2
-
14
-
-
0033283541
-
Advances in spherical harmonic device modeling: Calibration and nanoscale electron dynamics
-
C.-K. Lin, N. Goldsman, I. Mayergoyz, S. Aronowitz, and N. Belova, "Advances in spherical harmonic device modeling: Calibration and nanoscale electron dynamics," in Proc. Simulation Semiconductor Processes and Devices, 1999, pp. 167-170.
-
(1999)
Proc. Simulation Semiconductor Processes and Devices
, pp. 167-170
-
-
Lin, C.-K.1
Goldsman, N.2
Mayergoyz, I.3
Aronowitz, S.4
Belova, N.5
-
15
-
-
0026852585
-
Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous monte-carlo calculations
-
S.-C. Lee and T.-W. Tang, "Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous monte-carlo calculations," Solid-State Electron., vol. 35, no. 4, pp. 561-569, 1992.
-
(1992)
Solid-state Electron.
, vol.35
, Issue.4
, pp. 561-569
-
-
Lee, S.-C.1
Tang, T.-W.2
-
16
-
-
0026170802
-
Hydrodynamic equations for semiconductors with non-parabolic band structure
-
June
-
R. Thoma, A. Emunds, B. Meinerzhagen, H. J. Peifer, and W. L. Engl, "Hydrodynamic equations for semiconductors with non-parabolic band structure," IEEE Trans. Electron Devices, vol. 38, pp. 1343-1353, June 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 1343-1353
-
-
Thoma, R.1
Emunds, A.2
Meinerzhagen, B.3
Peifer, H.J.4
Engl, W.L.5
-
17
-
-
30244514592
-
Band structure of indium antimonide
-
E. O. Kane, "Band structure of indium antimonide," J. Phys. Chem. Solids, vol. 1, pp. 249-261, 1957.
-
(1957)
J. Phys. Chem. Solids
, vol.1
, pp. 249-261
-
-
Kane, E.O.1
-
18
-
-
0025449439
-
An analytical model of the energy distribution of hot electrons
-
June
-
D. Cassi and B. Riccò, "An analytical model of the energy distribution of hot electrons," IEEE Trans. Electron Devices, vol. 37, pp. 1514-1521, June 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, pp. 1514-1521
-
-
Cassi, D.1
Riccò, B.2
-
19
-
-
0030285576
-
Non-parabolic hydrodynamic formulations for the simulation of inhomogeneous semiconductor devices
-
A. W. Smith and K. F. Brennan, "Non-parabolic hydrodynamic formulations for the simulation of inhomogeneous semiconductor devices," Solid-State Electron., vol. 39, no. 11, pp. 1659-1668, 1996.
-
(1996)
Solid-state Electron.
, vol.39
, Issue.11
, pp. 1659-1668
-
-
Smith, A.W.1
Brennan, K.F.2
-
20
-
-
35949009958
-
Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
-
M. V. Fischetti and S. E. Laux, "Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects," Phys. Rev. B, vol. 38, no. 14, pp. 9721-9745, 1988.
-
(1988)
Phys. Rev. B
, vol.38
, Issue.14
, pp. 9721-9745
-
-
Fischetti, M.V.1
Laux, S.E.2
-
21
-
-
0028446731
-
Steady-state and transient analysis of submicron devices using energy balance and simplified hydrodynamic models
-
June
-
Y. Apanovich, E. Lyumkis, B. Polsky, A. Shur, and P. Blakey, "Steady-state and transient analysis of submicron devices using energy balance and simplified hydrodynamic models," IEEE Trans. Computer-Aided Design, vol. 13, pp. 702-711, June 1994.
-
(1994)
IEEE Trans. Computer-aided Design
, vol.13
, pp. 702-711
-
-
Apanovich, Y.1
Lyumkis, E.2
Polsky, B.3
Shur, A.4
Blakey, P.5
-
23
-
-
0024647374
-
Energy transport numerical simulation of graded AlGaAs/GaAs heterojunction bipolar transistors
-
Apr.
-
E. M. Azoff, "Energy transport numerical simulation of graded AlGaAs/GaAs heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 36, pp. 609-616, Apr. 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 609-616
-
-
Azoff, E.M.1
-
24
-
-
0004147925
-
-
Reading,MA: Addison-Wesley, Modular Series on Solid State Devices
-
M.Lundstrom, Fundamentals of Carrier Transport. Reading,MA: Addison-Wesley, 1990, vol. 10, Modular Series on Solid State Devices.
-
(1990)
Fundamentals of Carrier Transport
, vol.10
-
-
Lundstrom, M.1
-
25
-
-
0041073802
-
Using six moments of Boltzmann's transport equation for device simulation
-
T. Grasser, H. Kosina, M. Gritsch, and S. Selberherr, "Using six moments of Boltzmann's transport equation for device simulation," J. Appl. Phys., vol. 90, no. 5, pp. 2389-2396, 2001.
-
(2001)
J. Appl. Phys.
, vol.90
, Issue.5
, pp. 2389-2396
-
-
Grasser, T.1
Kosina, H.2
Gritsch, M.3
Selberherr, S.4
-
26
-
-
0028444676
-
Comparative studies of hydrodynamic and energy transport models
-
K. Souissi, F. Odeh, H. H. K. Tang, and A. Gnudi, "Comparative studies of hydrodynamic and energy transport models," COMPEL, vol. 13, no. 2, pp. 439-453, 1994.
-
(1994)
COMPEL
, vol.13
, Issue.2
, pp. 439-453
-
-
Souissi, K.1
Odeh, F.2
Tang, H.H.K.3
Gnudi, A.4
-
27
-
-
0026105521
-
Numerical simulation of a steady-state electron shock wave in a submicrometer semiconductor device
-
Feb.
-
C. L. Gardner, "Numerical simulation of a steady-state electron shock wave in a submicrometer semiconductor device," IEEE Trans. Electron Devices, vol. 38, pp. 392-398, Feb. 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 392-398
-
-
Gardner, C.L.1
-
28
-
-
0035382405
-
Moment methods for the semiconductor boltzmann equation in bounded position domains
-
C. Ringhofer, C. Schmeiser, and A. Zwirchmayer, "Moment methods for the semiconductor boltzmann equation in bounded position domains," SIAM J. Numer. Anal., vol. 39, no. 3, pp. 1078-1095, 2001.
-
(2001)
SIAM J. Numer. Anal.
, vol.39
, Issue.3
, pp. 1078-1095
-
-
Ringhofer, C.1
Schmeiser, C.2
Zwirchmayer, A.3
-
29
-
-
0033889136
-
Extended moment method for electrons in semiconductors
-
H. Struchtrup, "Extended moment method for electrons in semiconductors," Physica A, vol. 275, pp. 229-255, 2000.
-
(2000)
Physica A
, vol.275
, pp. 229-255
-
-
Struchtrup, H.1
-
30
-
-
0037087458
-
Characterization of the hot electron distribution function using six moments
-
T. Grasser, H. Kosina, C. Heitzinger, and S. Selberherr, "Characterization of the hot electron distribution function using six moments," J. Appl. Phys., vol. 91, no. 6, pp. 3869-3879, 2002.
-
(2002)
J. Appl. Phys.
, vol.91
, Issue.6
, pp. 3869-3879
-
-
Grasser, T.1
Kosina, H.2
Heitzinger, C.3
Selberherr, S.4
-
31
-
-
0000512487
-
Failure of extended moment equation approaches to describe ballistic transport in submicron structures
-
M. Nekovee, B. J. Geurts, H. M. J. Boots, and M. F. H. Schuurmans, "Failure of extended moment equation approaches to describe ballistic transport in submicron structures," Phys. Rev. B, vol. 45, no. 10, pp. 6643-6651, 1992.
-
(1992)
Phys. Rev. B
, vol.45
, Issue.10
, pp. 6643-6651
-
-
Nekovee, M.1
Geurts, B.J.2
Boots, H.M.J.3
Schuurmans, M.F.H.4
-
32
-
-
0033640307
-
Moment equations for electrons in semiconductors: Comparison of spherical harmonics and full moments
-
S. F. Liotta and H. Struchtrup, "Moment equations for electrons in semiconductors: Comparison of spherical harmonics and full moments," Solid-State Electron., vol. 44, pp. 95-103, 2000.
-
(2000)
Solid-state Electron.
, vol.44
, pp. 95-103
-
-
Liotta, S.F.1
Struchtrup, H.2
-
33
-
-
0015489215
-
Semiconductor current-flow equations (Diffusion and Degeneracy)
-
Dec.
-
R. Stratton, "Semiconductor current-flow equations (Diffusion and Degeneracy)," IEEE Trans. Electron Devices, vol. ED-19, pp. 1288-1292, Dec. 1972.
-
(1972)
IEEE Trans. Electron Devices
, vol.ED-19
, pp. 1288-1292
-
-
Stratton, R.1
-
34
-
-
0017488005
-
Two formulations of semiconductor transport equations
-
P. T. Landsberg and S. A. Hope, "Two formulations of semiconductor transport equations," Solid-State Electron., vol. 20, pp. 421-429, 1977.
-
(1977)
Solid-state Electron.
, vol.20
, pp. 421-429
-
-
Landsberg, P.T.1
Hope, S.A.2
-
35
-
-
0021480077
-
Dgradv or grad(Dv)?
-
P. T. Landsberg, "Dgradv or grad(Dv)?," J. Appl. Phys., vol. 56, no. 4, pp. 1119-1122, 1984.
-
(1984)
J. Appl. Phys.
, vol.56
, Issue.4
, pp. 1119-1122
-
-
Landsberg, P.T.1
-
36
-
-
0034275437
-
Two formulations of semiconductor transport equations based on spherical harmonic expansion of the boltzmann transport equation
-
Sept.
-
T.-W. Tang and H. Gan, "Two formulations of semiconductor transport equations based on spherical harmonic expansion of the boltzmann transport equation," IEEE Trans. Electron Devices, vol. 47, pp. 1726-1732, Sept. 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 1726-1732
-
-
Tang, T.-W.1
Gan, H.2
-
37
-
-
0031378730
-
Influence of hydrodynamic models on the prediction of submicrometer device characteristics
-
Dec.
-
M. Ieong and T.-W. Tang, "Influence of hydrodynamic models on the prediction of submicrometer device characteristics," IEEE Trans. Electron Devices, vol. 44, pp. 2242-2251, Dec. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 2242-2251
-
-
Ieong, M.1
Tang, T.-W.2
-
38
-
-
0003079830
-
Comparison of semiconductor transport models using a Monte Carlo consistency check
-
Jan.
-
S. Ramaswamy and T.-W. Tang, "Comparison of semiconductor transport models using a Monte Carlo consistency check," IEEE Trans. Electron Devices, vol. 41, pp. 76-83, Jan. 1994.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 76-83
-
-
Ramaswamy, S.1
Tang, T.-W.2
-
39
-
-
0028518936
-
Generalized energy transport models for semiconductor device simulation
-
M. C. Vecchi and L. G. Reyna, "Generalized energy transport models for semiconductor device simulation," Solid-State Electron., vol. 37, no. 10, pp. 1705-1716, 1994.
-
(1994)
Solid-state Electron.
, vol.37
, Issue.10
, pp. 1705-1716
-
-
Vecchi, M.C.1
Reyna, L.G.2
-
40
-
-
0035248897
-
A new method for extracting carrier mobility from Monte Carlo device simulation
-
Feb.
-
H. Gan and T.-W. Tang, "A new method for extracting carrier mobility from Monte Carlo device simulation," IEEE Trans. Electron Devices, vol. 48, pp. 399-401, Feb. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, pp. 399-401
-
-
Gan, H.1
Tang, T.-W.2
-
41
-
-
0022957388
-
Physical models for numerical device simulation
-
W. Engl, Ed. Amsterdam, The Netherlands: North-Holland, Advances in CAD for VLSI
-
G. Baccarani, M. Rudan, R. Guerrieri, and P. Ciampolini, "Physical models for numerical device simulation," in Process and Device Modeling, W. Engl, Ed. Amsterdam, The Netherlands: North-Holland, 1986, vol. 1, Advances in CAD for VLSI, pp. 107-158.
-
(1986)
Process and Device Modeling
, vol.1
, pp. 107-158
-
-
Baccarani, G.1
Rudan, M.2
Guerrieri, R.3
Ciampolini, P.4
-
43
-
-
0027881053
-
An improved hydrodynamic transport model for silicon
-
Aug.
-
T.-W. Tang, S. Ramaswamy, and J. Nam, "An improved hydrodynamic transport model for silicon," IEEE Trans. Electron Devices, vol. 40, pp. 1469-1476, Aug. 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 1469-1476
-
-
Tang, T.-W.1
Ramaswamy, S.2
Nam, J.3
-
44
-
-
0035695883
-
An analytic expression of thermal diffusion coefficient for the hydrodynamic simulation of semiconductor devices
-
T.-W. Tang, X. Wang, H. Gan, and M. K. Leong, "An analytic expression of thermal diffusion coefficient for the hydrodynamic simulation of semiconductor devices," VLSI Design, vol. 13, no. 1-4, pp. 131-134, 2000.
-
(2000)
VLSI Design
, vol.13
, Issue.1-4
, pp. 131-134
-
-
Tang, T.-W.1
Wang, X.2
Gan, H.3
Leong, M.K.4
-
45
-
-
0024718053
-
MOS device modeling at 77 K
-
Aug.
-
S. Selberherr, "MOS device modeling at 77 K," IEEE Trans. Electron Devices, vol. 36, pp. 1464-1474, Aug. 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 1464-1474
-
-
Selberherr, S.1
-
46
-
-
0028532955
-
Hydrodynamic simulation of semiconductor devices operating at low temperature
-
Nov.
-
A. Leone, A. Gnudi, and G. Baccarani, "Hydrodynamic simulation of semiconductor devices operating at low temperature," IEEE Trans. Computer-Aided Design, vol. 13, pp. 1400-1408, Nov. 1994.
-
(1994)
IEEE Trans. Computer-aided Design
, vol.13
, pp. 1400-1408
-
-
Leone, A.1
Gnudi, A.2
Baccarani, G.3
-
47
-
-
0021377152
-
Electrical current and carrier density in degenerate materials with nonuniform band structure
-
Feb.
-
A. H. Marshak and C. M. VanVliet, "Electrical current and carrier density in degenerate materials with nonuniform band structure," Proc. IEEE, vol. 72, pp. 148-164, Feb. 1984.
-
(1984)
Proc. IEEE
, vol.72
, pp. 148-164
-
-
Marshak, A.H.1
VanVliet, C.M.2
-
48
-
-
0024871063
-
A generalized hydrodynamic model capable of incorporating Monte Carlo results
-
R. Thoma, A. Emunds, B. Meinerzhagen, H. Peifer, and W. L. Engl, "A generalized hydrodynamic model capable of incorporating Monte Carlo results," in Proc. Int. Electron Devices Meeting, 1989, pp. 139-142.
-
(1989)
Proc. Int. Electron Devices Meeting
, pp. 139-142
-
-
Thoma, R.1
Emunds, A.2
Meinerzhagen, B.3
Peifer, H.4
Engl, W.L.5
-
49
-
-
0027887450
-
A study of the influence of hydrodynamic model effects on characteristics of silicon bipolar transistors
-
A. D. Sadovnikov and D. J. Roulston, "A study of the influence of hydrodynamic model effects on characteristics of silicon bipolar transistors," COMPEL, vol. 12, no. 4, pp. 245-262, 1993.
-
(1993)
COMPEL
, vol.12
, Issue.4
, pp. 245-262
-
-
Sadovnikov, A.D.1
Roulston, D.J.2
-
50
-
-
0035471804
-
Comparative study for electron transit times evaluated by DD, HD, and MC device simulation for a SiGe HBT
-
Oct.
-
C. Jungeman, B. Neinhüs, and B. Meinerzhagen, "Comparative study for electron transit times evaluated by DD, HD, and MC device simulation for a SiGe HBT," IEEE Trans. Electron Devices, vol. 48, pp. 2216-2220, Oct. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, pp. 2216-2220
-
-
Jungeman, C.1
Neinhüs, B.2
Meinerzhagen, B.3
-
51
-
-
0026818322
-
Accounting for bandstructure effects in the hydrodynamic model: A first-order approach for silicon device simulation
-
T. J. Bordelon, X.-L. Wang, C. M. Maziar, and A. F. Tasch, "Accounting for bandstructure effects in the hydrodynamic model: A first-order approach for silicon device simulation," Solid-State Electron., vol. 35, no. 2, pp. 131-139, 1992.
-
(1992)
Solid-state Electron.
, vol.35
, Issue.2
, pp. 131-139
-
-
Bordelon, T.J.1
Wang, X.-L.2
Maziar, C.M.3
Tasch, A.F.4
-
52
-
-
0025578252
-
An efficient nonparabolic formulation of the hydrodynamic model for silicon device simulation
-
_, "An efficient nonparabolic formulation of the hydrodynamic model for silicon device simulation," in Proc. Int. Electron Devices Meeting, 1990, pp. 353-356.
-
(1990)
Proc. Int. Electron Devices Meeting
, pp. 353-356
-
-
-
53
-
-
0026735256
-
An improved energy transport model including nonparabolicity and nonmaxwellian distribution effects
-
Jan.
-
D. Chen, E. C. Kan, U. Ravaioli, C.-W. Shu, and R. W. Dutton, "An improved energy transport model including nonparabolicity and nonmaxwellian distribution effects," IEEE Electron Device Lett., vol. 13, pp. 26-28, Jan. 1992.
-
(1992)
IEEE Electron Device Lett.
, vol.13
, pp. 26-28
-
-
Chen, D.1
Kan, E.C.2
Ravaioli, U.3
Shu, C.-W.4
Dutton, R.W.5
-
54
-
-
0031632573
-
Time-dependent solution of a full hydrodynamic model including convective terms and viscous effects
-
D. Xu, T.-W. Tang, and S. S. Kucherenko, "Time-dependent solution of a full hydrodynamic model including convective terms and viscous effects," VLSI Design, vol. 6, no. 1-4, pp. 173-176, 1998.
-
(1998)
VLSI Design
, vol.6
, Issue.1-4
, pp. 173-176
-
-
Xu, D.1
Tang, T.-W.2
Kucherenko, S.S.3
-
56
-
-
0027678252
-
Non-isothermal extension of the Scharfetter-Gummel technique for hot carrier transport in heterostructure simulations
-
Oct.
-
A. W. Smith and A. Rohatgi, "Non-isothermal extension of the Scharfetter-Gummel technique for hot carrier transport in heterostructure simulations," IEEE Trans. Computer-Aided Design, vol. 12. pp. 1515-1523, Oct. 1993.
-
(1993)
IEEE Trans. Computer-aided Design
, vol.12
, pp. 1515-1523
-
-
Smith, A.W.1
Rohatgi, A.2
-
57
-
-
0030193644
-
Comparison of nonparabolic hydrodynamic simulations for semiconductor devices
-
A. W. Smith and K. F. Brennan, "Comparison of nonparabolic hydrodynamic simulations for semiconductor devices," Solid-State Electron., vol. 39, no. 7, pp. 1055-1063, 1996.
-
(1996)
Solid-state Electron.
, vol.39
, Issue.7
, pp. 1055-1063
-
-
Smith, A.W.1
Brennan, K.F.2
-
59
-
-
0035863445
-
The onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
-
O. Muscato, "The onsager reciprocity principle as a check of consistency for semiconductor carrier transport models," Physica A, vol. 289, pp. 422-458, 2001.
-
(2001)
Physica A
, vol.289
, pp. 422-458
-
-
Muscato, O.1
-
60
-
-
0000766999
-
Maximum entropy principle within a total energy scheme: Application to hot-carrier transport in semiconductors
-
M. Trovato and L. Reggiani, "Maximum entropy principle within a total energy scheme: Application to hot-carrier transport in semiconductors," Phys. Rev. B, vol. 61, no. 24, pp. 16 667-16 681, 2000.
-
(2000)
Phys. Rev. B
, vol.61
, Issue.24
, pp. 16667-16681
-
-
Trovato, M.1
Reggiani, L.2
-
61
-
-
4243052465
-
A new approach for the derivation of macroscopic balance equations beyond the relaxation time approximation
-
W. Fichtner and D. Aemmer, Eds. Konstanz, Germany: Hartung-Gorre
-
R. Thoma and W. L. Engl, "A new approach for the derivation of macroscopic balance equations beyond the relaxation time approximation," in Simulation of Semiconductor Devices and Processes, W. Fichtner and D. Aemmer, Eds. Konstanz, Germany: Hartung-Gorre, 1991, vol. 4, pp. 185-194.
-
(1991)
Simulation of Semiconductor Devices and Processes
, vol.4
, pp. 185-194
-
-
Thoma, R.1
Engl, W.L.2
-
62
-
-
22244487894
-
Why are there so many different hydrodynamic transport models in semiconductor device simulation?
-
T.-W. Tang and M. K. Ieong, "Why are there so many different hydrodynamic transport models in semiconductor device simulation?," in Proc. 2nd NASA Device Modeling Workshop. 1997, pp. 127-136.
-
(1997)
Proc. 2nd NASA Device Modeling Workshop
, pp. 127-136
-
-
Tang, T.-W.1
Ieong, M.K.2
-
63
-
-
0017930767
-
Electrical current in solids with position-dependent band structure
-
A. H. Marshak and K. M. van Vliet, "Electrical current in solids with position-dependent band structure," Solid-State Electron., vol. 21, pp. 417-427, 1978.
-
(1978)
Solid-state Electron.
, vol.21
, pp. 417-427
-
-
Marshak, A.H.1
Van Vliet, K.M.2
-
64
-
-
0023308716
-
Closed-form method for solving the steady-state generalized energy-momentum conservation equations
-
E. M. Azoff, "Closed-form method for solving the steady-state generalized energy-momentum conservation equations," COMPEL, vol. 6, no. 1, pp. 25-30, 1987.
-
(1987)
COMPEL
, vol.6
, Issue.1
, pp. 25-30
-
-
Azoff, E.M.1
-
65
-
-
0023978331
-
Hydrodynamic hot-electron transport model with Monte Carlo-generated transport parameters
-
3
-
D. L. Woolard, R. J. Trew, and M. A. Littlejohn, "Hydrodynamic hot-electron transport model with Monte Carlo-generated transport parameters," Solid-State Electron., vol. 31, no. 3/3, pp. 571-574, 1988.
-
(1988)
Solid-state Electron.
, vol.31
, Issue.3
, pp. 571-574
-
-
Woolard, D.L.1
Trew, R.J.2
Littlejohn, M.A.3
-
66
-
-
0000997318
-
Hydrodynamic electron-transport model: Nonparabolic corrections to the streaming terms
-
D. L. Woolard, H. Tian. R. J. Trew, M. A. Littlejohn, and K. W. Kim, "Hydrodynamic electron-transport model: Nonparabolic corrections to the streaming terms," Phys. Rev. B, vol. 44, no. 20, pp. 11 119-11 132, 1991.
-
(1991)
Phys. Rev. B
, vol.44
, Issue.20
, pp. 11119-11132
-
-
Woolard, D.L.1
Tian, H.2
Trew, R.J.3
Littlejohn, M.A.4
Kim, K.W.5
-
67
-
-
0000482141
-
Construction of higher-moment terms in the hydrodynamic electron-transport model
-
D. L. Woolard, H. Tian, M. A. Littlejohn, K. W. Kim, R. J. Trew, M. K. Jeong, and T.-W. Tang, "Construction of higher-moment terms in the hydrodynamic electron-transport model," J. Appl. Phys., vol. 74, no. 10, pp. 6197-6207, 1993.
-
(1993)
J. Appl. Phys.
, vol.74
, Issue.10
, pp. 6197-6207
-
-
Woolard, D.L.1
Tian, H.2
Littlejohn, M.A.3
Kim, K.W.4
Trew, R.J.5
Jeong, M.K.6
Tang, T.-W.7
-
68
-
-
0025458012
-
A fully nonparabolic hydrodynamic model for describing hot electron transport in GaAs
-
R. A. Stewart and J. N. Churchill, "A fully nonparabolic hydrodynamic model for describing hot electron transport in GaAs," Solid-State Electron., vol. 33, no. 7, pp. 819-829, 1990.
-
(1990)
Solid-state Electron.
, vol.33
, Issue.7
, pp. 819-829
-
-
Stewart, R.A.1
Churchill, J.N.2
-
69
-
-
0024685993
-
Improved relaxation-time formulation of collision terms for two-band hydrodynamic models
-
R. A. Stewart, L. Ye, and J. N. Churchill, "Improved relaxation-time formulation of collision terms for two-band hydrodynamic models," Solid-State Electron., vol. 32, no. 6, pp. 497-502, 1989.
-
(1989)
Solid-state Electron.
, vol.32
, Issue.6
, pp. 497-502
-
-
Stewart, R.A.1
Ye, L.2
Churchill, J.N.3
-
70
-
-
0023965872
-
Hydrodynamic carrier transport in semiconductors with multiple band minima
-
C. L. Wilson, "Hydrodynamic carrier transport in semiconductors with multiple band minima," IEEE Trans. Electron Devices, vol. 35, pp. 180-187, 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, pp. 180-187
-
-
Wilson, C.L.1
-
71
-
-
0031271780
-
1-xAs ballistic diode using multivalley nonparabolic hydrodynamic balance equations
-
1-xAs ballistic diode using multivalley nonparabolic hydrodynamic balance equations," Solid-State Electron., vol. 41, no. 11, pp. 1781-1785, 1997.
-
(1997)
Solid-state Electron.
, vol.41
, Issue.11
, pp. 1781-1785
-
-
Cao, J.C.1
Lei, X.L.2
-
73
-
-
33646876518
-
Transport coefficients for a GaAs hydrodynamic model extracted from inhomogenous Monte Carlo calculations
-
M. Ieong and T.-W. Tang, "Transport coefficients for a GaAs hydrodynamic model extracted from inhomogenous Monte Carlo calculations," in Proc. Int. Workshop Computational Electronics, 1993, pp. 65-69.
-
(1993)
Proc. Int. Workshop Computational Electronics
, pp. 65-69
-
-
Ieong, M.1
Tang, T.-W.2
-
75
-
-
0000302099
-
Electron energy distributions in silicon at low applied voltages and high electric fields
-
A. Abramo and C. Fiegna, "Electron energy distributions in silicon at low applied voltages and high electric fields," J. Appl. Phys., vol. 80, no. 2, pp. 889-893, 1996.
-
(1996)
J. Appl. Phys.
, vol.80
, Issue.2
, pp. 889-893
-
-
Abramo, A.1
Fiegna, C.2
-
76
-
-
0028467330
-
Modeling of the hot electron sub-population and its application to impact ionization in submicron silicon devices-part I: Transport equations
-
July
-
P. G. Scrobohaci and T.-W. Tang, "Modeling of the hot electron sub-population and its application to impact ionization in submicron silicon devices-part I: Transport equations," IEEE Trans. Electron Devices, vol. 41, pp. 1197-1205, July 1994.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 1197-1205
-
-
Scrobohaci, P.G.1
Tang, T.-W.2
-
77
-
-
0028498246
-
Impact ionization modeling using simulation of high energy tail distributions
-
Sept.
-
J.-G. Ahn, C.-S. Yao, Y.-J. Park, H.-S. Min, and R. W. Dutton, "Impact ionization modeling using simulation of high energy tail distributions," IEEE Electron Device Lett., vol. 15, pp. 348-350, Sept. 1994.
-
(1994)
IEEE Electron Device Lett.
, vol.15
, pp. 348-350
-
-
Ahn, J.-G.1
Yao, C.-S.2
Park, Y.-J.3
Min, H.-S.4
Dutton, R.W.5
-
78
-
-
0027111544
-
Relaxation time approximation and mixing of hot and cold electron populations
-
T. J. Bordelon, V. M. Agostinelli, X.-L. Wang, C. M. Maziar, and A. F. Tasch, "Relaxation time approximation and mixing of hot and cold electron populations," Electron. Lett., vol. 28, no. 12, pp. 1173-1175, 1992.
-
(1992)
Electron. Lett.
, vol.28
, Issue.12
, pp. 1173-1175
-
-
Bordelon, T.J.1
Agostinelli, V.M.2
Wang, X.-L.3
Maziar, C.M.4
Tasch, A.F.5
-
79
-
-
0032096664
-
A simplified impact ionization model based on the average energy of hot-electron subpopulation
-
June
-
T.-W. Tang and J. Nam, "A simplified impact ionization model based on the average energy of hot-electron subpopulation," IEEE Electron Device Lett., vol. 19, pp. 201-203, June 1998.
-
(1998)
IEEE Electron Device Lett.
, vol.19
, pp. 201-203
-
-
Tang, T.-W.1
Nam, J.2
-
80
-
-
0020142314
-
An efficient technique for two-dimensional simulation of velocity overshoot effects in Si and GaAs devices
-
R. K. Cook and J. Frey, "An efficient technique for two-dimensional simulation of velocity overshoot effects in Si and GaAs devices," COMPEL, vol. 1, no. 2, pp. 65-87, 1982.
-
(1982)
COMPEL
, vol.1
, Issue.2
, pp. 65-87
-
-
Cook, R.K.1
Frey, J.2
-
81
-
-
0030085187
-
Impact ionization model using average energy and average square energy of distribution function
-
K. Sonoda, S. T. Dunham, M. Yamaji, K. Taniguchi, and C. Hamaguchi, "Impact ionization model using average energy and average square energy of distribution function," Jap. J. Appl. Phys., vol. 35, no. 2B, pp. 818-825, 1996.
-
(1996)
Jap. J. Appl. Phys.
, vol.35
, Issue.2 B
, pp. 818-825
-
-
Sonoda, K.1
Dunham, S.T.2
Yamaji, M.3
Taniguchi, K.4
Hamaguchi, C.5
-
82
-
-
0000642422
-
Moment expansion approach to calculate impact ionization rate in submicron silicon devices
-
K. Sonoda, M. Yamaji, K. Taniguchi, C. Hamaguchi, and S. T. Dunham, "Moment expansion approach to calculate impact ionization rate in submicron silicon devices," J. Appl. Phys., vol. 80, no. 9, pp. 5444-5448, 1996.
-
(1996)
J. Appl. Phys.
, vol.80
, Issue.9
, pp. 5444-5448
-
-
Sonoda, K.1
Yamaji, M.2
Taniguchi, K.3
Hamaguchi, C.4
Dunham, S.T.5
-
83
-
-
4243061990
-
Dual energy transport model with coupled lattice and carrier temperatures
-
S. Selberherr, H. Stippel, and E. Strasser, Eds. Berlin, Germany: Springer-Verlag
-
D. Chen, Z. Yu, K.-C. Wu, R. Goossens, and R. W. Dutton, "Dual energy transport model with coupled lattice and carrier temperatures," in Simulation of Semiconductor Devices and Processes, S. Selberherr, H. Stippel, and E. Strasser, Eds. Berlin, Germany: Springer-Verlag, 1993, vol. 5, pp. 157-160.
-
(1993)
Simulation of Semiconductor Devices and Processes
, vol.5
, pp. 157-160
-
-
Chen, D.1
Yu, Z.2
Wu, K.-C.3
Goossens, R.4
Dutton, R.W.5
-
84
-
-
0031235338
-
A thermal-fully hydrodynamic model for semiconductor devices and applications to III-V HBT simulation
-
Sept.
-
A. Benvenuti, W. M. Coughran, and M. R. Pinto, "A thermal-fully hydrodynamic model for semiconductor devices and applications to III-V HBT simulation," IEEE Trans. Electron Devices, vol. 44, pp. 1349-1359, Sept. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 1349-1359
-
-
Benvenuti, A.1
Coughran, W.M.2
Pinto, M.R.3
-
85
-
-
0026227311
-
An extended Scharfetter-Gummel scheme for high order momentum equations
-
B. J. Geurts, "An extended Scharfetter-Gummel scheme for high order momentum equations," COMPEL, vol. 10, no. 3, pp. 179-194, 1991.
-
(1991)
COMPEL
, vol.10
, Issue.3
, pp. 179-194
-
-
Geurts, B.J.1
-
86
-
-
0029546843
-
Two-dimensional tensor temperature extension of the hydrodynamic model and its applications
-
Dec.
-
B. PejčinoviĆ, H. H. K. Tang, J. L. Egley, L. R. Logan, and G. R. Srinivasan, "Two-dimensional tensor temperature extension of the hydrodynamic model and its applications," IEEE Trans. Electron Devices, vol. 42, pp. 2147-2155, Dec. 1995.
-
(1995)
IEEE Trans. Electron Devices
, vol.42
, pp. 2147-2155
-
-
Pejčinović, B.1
Tang, H.H.K.2
Egley, J.L.3
Logan, L.R.4
Srinivasan, G.R.5
-
87
-
-
0022044296
-
An investigation of steady-state velocity overshoot in silicon
-
G. Baccarani and M. R. Wordeman, "An investigation of steady-state velocity overshoot in silicon," Solid-State Electron., vol. 28, no. 4, pp. 407-116, 1985.
-
(1985)
Solid-state Electron.
, vol.28
, Issue.4
, pp. 407-1116
-
-
Baccarani, G.1
Wordeman, M.R.2
-
88
-
-
0027574577
-
A critical examination of the assumptions underlying macroscopic transport equations for silicon devices
-
Mar.
-
M. A. Stettier, M. A. Alam, and M. S. Lundstrom, "A critical examination of the assumptions underlying macroscopic transport equations for silicon devices," IEEE Trans. Electron Devices, vol. 40, pp. 733-740, Mar. 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 733-740
-
-
Stettier, M.A.1
Alam, M.A.2
Lundstrom, M.S.3
-
89
-
-
0000263622
-
The hot-electron problem in small semiconductor devices
-
W. Hansen and M. Miura-Mattausch, "The hot-electron problem in small semiconductor devices," J. Appl. Phys., vol. 60, no. 2, pp. 650-656, 1986.
-
(1986)
J. Appl. Phys.
, vol.60
, Issue.2
, pp. 650-656
-
-
Hansen, W.1
Miura-Mattausch, M.2
-
90
-
-
33646867100
-
Transport models for MBTE
-
J. J. H. Miller, Ed. Dublin, Ireland: Boole
-
S.-C. Lee, T.-W. Tang, and D. H. Navon, "Transport models for MBTE," in NASECODE VI - Numerical Analysis of Semiconductor Devices and Integrated Circuits, J. J. H. Miller, Ed. Dublin, Ireland: Boole, 1989, pp. 261-265.
-
(1989)
NASECODE VI - Numerical Analysis of Semiconductor Devices and Integrated Circuits
, pp. 261-265
-
-
Lee, S.-C.1
Tang, T.-W.2
Navon, D.H.3
-
91
-
-
0027608161
-
Computation of drain and substrate current in ultra-short-channel nMOSFET's using the hydrodynamic model
-
June
-
K. Rahmat, J. White, and D. A. Antoniadis, "Computation of drain and substrate current in ultra-short-channel nMOSFET's using the hydrodynamic model," IEEE Trans. Computer-Aided Design, vol. 12, pp. 817-824, June 1993.
-
(1993)
IEEE Trans. Computer-aided Design
, vol.12
, pp. 817-824
-
-
Rahmat, K.1
White, J.2
Antoniadis, D.A.3
-
92
-
-
0026953322
-
An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's
-
Nov.
-
V. M. Agostinelli, T. J. Bordelon, X. L. Wang, C. F. Yeap, C. M. Maziar, and A. F. Tasch, "An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's," IEEE Electron Device Lett., vol. 13, pp. 554-556, Nov. 1992.
-
(1992)
IEEE Electron Device Lett.
, vol.13
, pp. 554-556
-
-
Agostinelli, V.M.1
Bordelon, T.J.2
Wang, X.L.3
Yeap, C.F.4
Maziar, C.M.5
Tasch, A.F.6
-
93
-
-
0026116329
-
Monte Carlo simulation of transport in technolog. Ically significant semiconductors of the diamond and zinc-blende structures-part I: Homogeneous transport
-
Mar.
-
M. V. Fischetti, "Monte Carlo simulation of transport in technolog. ically significant semiconductors of the diamond and zinc-blende structures-part I: Homogeneous transport," IEEE Trans. Electron Devices, vol. 38, pp. 634-649, Mar. 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 634-649
-
-
Fischetti, M.V.1
-
94
-
-
0033185499
-
An energy relaxation time model for device simulation
-
B. Gonzales, V. Palankovski, H. Kosina, A. Hernandez, and S. Selberherr, "An energy relaxation time model for device simulation," Solid-State Electron., vol. 43, pp. 1791-1795, 1999.
-
(1999)
Solid-state Electron.
, vol.43
, pp. 1791-1795
-
-
Gonzales, B.1
Palankovski, V.2
Kosina, H.3
Hernandez, A.4
Selberherr, S.5
-
95
-
-
0030846942
-
Thermionic emission model of electron gate current in submicron NMOSFET's
-
Jan.
-
K. Hasnat, C.-F. Yeap, S. Jallepalli, S. A. Hareland, W.-K. Shih, V. M. Agostinelli, A. F. Tasch, and C. M. Maziar, "Thermionic emission model of electron gate current in submicron NMOSFET's," IEEE Trans. Electron Devices, vol. 44, pp. 129-138, Jan. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 129-138
-
-
Hasnat, K.1
Yeap, C.-F.2
Jallepalli, S.3
Hareland, S.A.4
Shih, W.-K.5
Agostinelli, V.M.6
Tasch, A.F.7
Maziar, C.M.8
-
96
-
-
85073889278
-
Analysis of spurious velocity overshoot in hydrodynamic simulations
-
May
-
D. Chen, E. Sangiorgi, M. R. Pinto, E. C. Kan, U. Ravaioli, and R. W. Dutton, "Analysis of spurious velocity overshoot in hydrodynamic simulations," in Proc. Int. Numerical Modeling Processes and Devices Integrated Circuits (NUPADIV), May 1992, pp. 109-114.
-
(1992)
Proc. Int. Numerical Modeling Processes and Devices Integrated Circuits (NUPADIV)
, pp. 109-114
-
-
Chen, D.1
Sangiorgi, E.2
Pinto, M.R.3
Kan, E.C.4
Ravaioli, U.5
Dutton, R.W.6
-
97
-
-
0035903407
-
Investigation of spurious velocity overshoot using Monte Carlo data
-
T. Grasser, H. Kosina, and S. Selberherr, "Investigation of spurious velocity overshoot using Monte Carlo data," Appl. Phys. Lett., vol. 79, no. 12, pp. 1900-1903, 2001.
-
(2001)
Appl. Phys. Lett.
, vol.79
, Issue.12
, pp. 1900-1903
-
-
Grasser, T.1
Kosina, H.2
Selberherr, S.3
-
98
-
-
0019476901
-
Effect of mesh spacing on static negative resistance in GaAs MESFET simulation
-
Jan.
-
S. E. Laux and R. J. Lomax, "Effect of mesh spacing on static negative resistance in GaAs MESFET simulation," IEEE Trans. Electron Devices, vol. ED-28, pp. 120-122, Jan. 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 120-122
-
-
Laux, S.E.1
Lomax, R.J.2
-
99
-
-
0031998952
-
Grid quality and its influence on accuracy and convergence in device simulation
-
Feb.
-
V. Axelrad, "Grid quality and its influence on accuracy and convergence in device simulation," IEEE Trans. Computer-Aided Design, vol. 17, pp. 149-157, Feb. 1998.
-
(1998)
IEEE Trans. Computer-aided Design
, vol.17
, pp. 149-157
-
-
Axelrad, V.1
-
100
-
-
0033312329
-
TCAD needs and applications from a user's perspective
-
M. Duane, "TCAD needs and applications from a user's perspective," IEICE Trans. Electron., vol. E82-C, no. 6, pp. 976-982, 1999.
-
(1999)
IEICE Trans. Electron.
, vol.E82-C
, Issue.6
, pp. 976-982
-
-
Duane, M.1
-
101
-
-
0029260011
-
+ devices by a hydrodynamic model: Subsonic and supersonic flows
-
+ devices by a hydrodynamic model: Subsonic and supersonic flows," COMPEL, vol. 14, no. 1, pp. 1-18, 1995.
-
(1995)
COMPEL
, vol.14
, Issue.1
, pp. 1-18
-
-
Anile, A.M.1
Maccora, C.2
Pidatella, R.M.3
-
102
-
-
0026107291
-
Solution of the hydrodynamic device model using high-order nonoscillatory shock capturing algorithms
-
Feb.
-
E. Fatemi, J. Jerome, and S. Osher, "Solution of the hydrodynamic device model using high-order nonoscillatory shock capturing algorithms," IEEE Trans. Computer-Aided Design, vol. 10, pp. 232-244, Feb. 1991.
-
(1991)
IEEE Trans. Computer-aided Design
, vol.10
, pp. 232-244
-
-
Fatemi, E.1
Jerome, J.2
Osher, S.3
-
103
-
-
0025401446
-
On the well-posedness of the two-dimensional hydrodynamic model for semiconductor devices
-
E. Thomann and F. Odeh, "On the well-posedness of the two-dimensional hydrodynamic model for semiconductor devices," COMPEL, vol. 9, no. 1, pp. 45-57, 1990.
-
(1990)
COMPEL
, vol.9
, Issue.1
, pp. 45-57
-
-
Thomann, E.1
Odeh, F.2
-
104
-
-
0022776857
-
Multi-dimensional discretization scheme for the hydrodynamic model of semiconductor devices
-
M. Rudan and F. Odeh, "Multi-dimensional discretization scheme for the hydrodynamic model of semiconductor devices," COMPEL, vol. 5, no. 3, pp. 149-183, 1986.
-
(1986)
COMPEL
, vol.5
, Issue.3
, pp. 149-183
-
-
Rudan, M.1
Odeh, F.2
-
105
-
-
0001727886
-
Upwind finite difference solution of boltzmann equation applied to electron transport in semiconductor devices
-
E. Fatemi and F. Odeh, "Upwind finite difference solution of boltzmann equation applied to electron transport in semiconductor devices," J. Comput. Phys., vol. 108, no. 2, pp. 209-217, 1993.
-
(1993)
J. Comput. Phys.
, vol.108
, Issue.2
, pp. 209-217
-
-
Fatemi, E.1
Odeh, F.2
-
106
-
-
0030161771
-
Efficient implementation of weighted ENO schemes
-
G. Jiang and C.-W. Shu, "Efficient implementation of weighted ENO schemes," J. Comput. Phys., vol. 126, no. 2, pp. 202-228, 1996.
-
(1996)
J. Comput. Phys.
, vol.126
, Issue.2
, pp. 202-228
-
-
Jiang, G.1
Shu, C.-W.2
-
107
-
-
0000897959
-
Monotonicity preserving weighted essentially nonoscillatory schemes with increasingly high order of accuracy
-
D. S. Balsara and C.-W. Shu, "Monotonicity preserving weighted essentially nonoscillatory schemes with increasingly high order of accuracy," J. Comput. Phys., vol. 160, no. 2, pp. 405-452, 2000.
-
(2000)
J. Comput. Phys.
, vol.160
, Issue.2
, pp. 405-452
-
-
Balsara, D.S.1
Shu, C.-W.2
-
108
-
-
0344393366
-
The local discontinuous Galerkin method for time-dependent covection- diffusion systems
-
B. Cockburn and C.-W. Shu, "The local discontinuous Galerkin method for time-dependent covection- diffusion systems," SIAM J. Numer. Anal., vol. 35, no. 6. pp. 2440-2463, 1998.
-
(1998)
SIAM J. Numer. Anal.
, vol.35
, Issue.6
, pp. 2440-2463
-
-
Cockburn, B.1
Shu, C.-W.2
-
109
-
-
0029371367
-
An analysis of the hydrodynamic semiconductor device model-boundary conditions and simulations
-
N. R. Aluru, K. H. Law, P. M. Pinsky, and R. W. Dutton, "An analysis of the hydrodynamic semiconductor device model-boundary conditions and simulations," COMPEL, vol. 14, no. 2/3, pp. 157-185, 1995.
-
(1995)
COMPEL
, vol.14
, Issue.2-3
, pp. 157-185
-
-
Aluru, N.R.1
Law, K.H.2
Pinsky, P.M.3
Dutton, R.W.4
-
110
-
-
0030379450
-
Well-posedness of the hydrodynamic model for semiconductors
-
L.-M. Yeh, "Well-posedness of the hydrodynamic model for semiconductors," Math. Meth. Appl. Sci., vol. 19, no. 18, pp. 1489-1507, 1996.
-
(1996)
Math. Meth. Appl. Sci.
, vol.19
, Issue.18
, pp. 1489-1507
-
-
Yeh, L.-M.1
-
111
-
-
0042734842
-
Extension of the Scharfetter-Gummel algorithm to the energy balance equation
-
Dec.
-
T.-W. Tang, "Extension of the Scharfetter-Gummel algorithm to the energy balance equation," IEEE Trans. Electron Devices, vol. ED-31, pp. 1912-1914, Dec. 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 1912-1914
-
-
Tang, T.-W.1
-
112
-
-
0022120123
-
A consistent nonisothermal extension of the Scharfetter-Gummel stable difference approximation
-
Sept.
-
C. C. McAndrew, K. Singhal, and E. L. Heasell, "A consistent nonisothermal extension of the Scharfetter-Gummel stable difference approximation," IEEE Electron Device Lett., vol. EDL-6, pp. 446-447, Sept. 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, pp. 446-447
-
-
McAndrew, C.C.1
Singhal, K.2
Heasell, E.L.3
-
113
-
-
0023965768
-
A new discretization strategy of the semiconductor equations comprising momentum and energy balance
-
Feb.
-
A. Forghieri, R. Guerrieri, P. Ciampolini, A. Gnudi, M. Rudan, and G. Baccarani, "A new discretization strategy of the semiconductor equations comprising momentum and energy balance," IEEE Trans. Computer-Aided Design, vol. 7, pp. 231-242, Feb. 1988.
-
(1988)
IEEE Trans. Computer-aided Design
, vol.7
, pp. 231-242
-
-
Forghieri, A.1
Guerrieri, R.2
Ciampolini, P.3
Gnudi, A.4
Rudan, M.5
Baccarani, G.6
-
114
-
-
0028460851
-
A time dependent hydrodynamic device simulator SNU-2D with new discretization scheme and algorithm
-
July
-
W.-S. Choi, J.-G. Ahn, Y.-J. Park, H.-S. Min, and C.-G. Hwang, "A time dependent hydrodynamic device simulator SNU-2D with new discretization scheme and algorithm," IEEE Trans. Computer-Aided Design, vol. 13, pp. 899-908, July 1994.
-
(1994)
IEEE Trans. Computer-aided Design
, vol.13
, pp. 899-908
-
-
Choi, W.-S.1
Ahn, J.-G.2
Park, Y.-J.3
Min, H.-S.4
Hwang, C.-G.5
-
115
-
-
11544358478
-
An efficient discretization scheme for the energy-continuity equation in semiconductors
-
G. Baccarani and M. Rudan, Eds. Bologna, Italy: Technoprint
-
A. Gnudi and F. Odeh, "An efficient discretization scheme for the energy-continuity equation in semiconductors," in Simulation of Semiconductor Devices and Processes, G. Baccarani and M. Rudan, Eds. Bologna, Italy: Technoprint, 1988, vol. 3, pp. 387-390.
-
(1988)
Simulation of Semiconductor Devices and Processes
, vol.3
, pp. 387-390
-
-
Gnudi, A.1
Odeh, F.2
-
116
-
-
0029406002
-
Discretization of flux densities in device simulations using optimum artificial diffusivity
-
Nov.
-
T.-W. Tang and M.-K. Ieong, "Discretization of flux densities in device simulations using optimum artificial diffusivity," IEEE Trans. Computer-Aided Design, vol. 14, pp. 1309-1315, Nov. 1995.
-
(1995)
IEEE Trans. Computer-aided Design
, vol.14
, pp. 1309-1315
-
-
Tang, T.-W.1
Ieong, M.-K.2
-
117
-
-
84939327080
-
A new highly efficient nonlinear relaxation scheme for hydrodynamic MOS simulations
-
B. Meinerzhagen, K. H. Bach, I. Bork, and W. L. Engl, "A new highly efficient nonlinear relaxation scheme for hydrodynamic MOS simulations," in Proc. Int. Numerical Modeling Processes and Devices Integrated Circuits (NUPADIV), 1992. pp. 91-96.
-
(1992)
Proc. Int. Numerical Modeling Processes and Devices Integrated Circuits (NUPADIV)
, pp. 91-96
-
-
Meinerzhagen, B.1
Bach, K.H.2
Bork, I.3
Engl, W.L.4
-
118
-
-
84916430884
-
A self-consistent iterative scheme for one-dimensional steady state transistor calculations
-
Oct.
-
H. K. Gummel, "A self-consistent iterative scheme for one-dimensional steady state transistor calculations," IEEE Trans. Electron Devices, vol. ED-11, pp. 455-465, Oct. 1964.
-
(1964)
IEEE Trans. Electron Devices
, vol.ED-11
, pp. 455-465
-
-
Gummel, H.K.1
-
119
-
-
0034295896
-
Circuit/device modeling at the quantum level
-
Oct.
-
Z. Yu, R. W. Dutton, and R. A. Kiehl, "Circuit/device modeling at the quantum level," IEEE Trans. Electron Devices, vol. 47, pp. 1819-1825, Oct. 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 1819-1825
-
-
Yu, Z.1
Dutton, R.W.2
Kiehl, R.A.3
-
120
-
-
0034272680
-
Electron transport in a model Si transistor
-
K. Banoo and M. S. Lundstrom, "Electron transport in a model Si transistor," Solid-State Electron., vol. 44, pp. 1689-1695, 2000.
-
(2000)
Solid-state Electron.
, vol.44
, pp. 1689-1695
-
-
Banoo, K.1
Lundstrom, M.S.2
-
121
-
-
0023962152
-
Nonstationary carrier dynamics in quarter-micron Si MOSFET's
-
Feb.
-
M. Tomizawa, K. Yokoyama, and A. Yoshii, "Nonstationary carrier dynamics in quarter-micron Si MOSFET's," IEEE Trans. Computer-Aided Design, vol. 7, pp. 254-258, Feb. 1988.
-
(1988)
IEEE Trans. Computer-aided Design
, vol.7
, pp. 254-258
-
-
Tomizawa, M.1
Yokoyama, K.2
Yoshii, A.3
-
122
-
-
84954108170
-
Non-local impact ionization in silicon devices
-
J. W. Slotboom, G. Streutker, M. J. v. Dort, P. H. Woerlee, A. Pruijmboom, and D. J. Gravesteijn, "Non-local impact ionization in silicon devices," in Proc. Int. Electron Devices Meeting, 1991, pp. 127-130.
-
(1991)
Proc. Int. Electron Devices Meeting
, pp. 127-130
-
-
Slotboom, J.W.1
Streutker, G.2
Dort, M.J.V.3
Woerlee, P.H.4
Pruijmboom, A.5
Gravesteijn, D.J.6
-
123
-
-
0020141359
-
Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's
-
June
-
R. K. Cook and J. Frey, "Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's," IEEE Trans. Electron Devices, vol. ED-29, pp. 970-977, June 1982.
-
(1982)
IEEE Trans. Electron Devices
, vol.ED-29
, pp. 970-977
-
-
Cook, R.K.1
Frey, J.2
-
124
-
-
0031276193
-
Simplified energy-balance model for pragmatic multi-dimensional device simulation
-
D. Chang and J. G. Fossum, "Simplified energy-balance model for pragmatic multi-dimensional device simulation," Solid-State Electron., vol. 41, no. 11, pp. 1795-1802, 1997.
-
(1997)
Solid-state Electron.
, vol.41
, Issue.11
, pp. 1795-1802
-
-
Chang, D.1
Fossum, J.G.2
-
125
-
-
0028377832
-
Highly stable and routinely convergent 2-Dimensional hydrodynamic device simulation
-
Q. Lin, N. Goldsman, and G.-C. Tai, "Highly stable and routinely convergent 2-Dimensional hydrodynamic device simulation," Solid-State Electron., vol. 37, no. 2, pp. 359-371, 1994.
-
(1994)
Solid-state Electron.
, vol.37
, Issue.2
, pp. 359-371
-
-
Lin, Q.1
Goldsman, N.2
Tai, G.-C.3
-
126
-
-
0020103264
-
Current equations for velocity overshoot
-
Mar.
-
K. K. Thornber, "Current equations for velocity overshoot," IEEE Electron Device Lett., vol. EDL-3, pp. 69-70, Mar. 1982.
-
(1982)
IEEE Electron Device Lett.
, vol.EDL-3
, pp. 69-70
-
-
Thornber, K.K.1
-
127
-
-
0026172097
-
An analytical formulation of the length coefficient for the augmented drift-diffusion model including velocity overshoot
-
June
-
D. Chen, E. C. Kan, and U. Ravaioli, "An analytical formulation of the length coefficient for the augmented drift-diffusion model including velocity overshoot," IEEE Trans. Electron Devices, vol. 38, pp. 1484-1490, June 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 1484-1490
-
-
Chen, D.1
Kan, E.C.2
Ravaioli, U.3
-
128
-
-
0029517311
-
Hydrodynamic models of semiconductor electron transport at high fields
-
M. G. Ancona, "Hydrodynamic models of semiconductor electron transport at high fields," VLSI Design, vol. 3, no. 2, pp. 101-114, 1995.
-
(1995)
VLSI Design
, vol.3
, Issue.2
, pp. 101-114
-
-
Ancona, M.G.1
-
129
-
-
0028374886
-
A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis
-
Feb.
-
H. Kosina and S. Selberherr, "A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis," IEEE Trans. Computer-Aided Design, vol. 13, pp. 201-210, Feb. 1994.
-
(1994)
IEEE Trans. Computer-aided Design
, vol.13
, pp. 201-210
-
-
Kosina, H.1
Selberherr, S.2
-
130
-
-
0742293422
-
-
Institute for Microelectronics, Technical Univ. Vienna, Vienna, Austria
-
MINIMOS-NT 2.0 User's Guide, Institute for Microelectronics, Technical Univ. Vienna, Vienna, Austria, 2002.
-
(2002)
MINIMOS-NT 2.0 User's Guide
-
-
-
131
-
-
84889205943
-
Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs
-
I. Bork, C. Jungemann, B. Meinerzhagen, and W. L. Engl, "Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs," in Proc. Int. Workshop Numerical Modeling Processes and Devices Integrated Circuits (NUPADV), 1994, pp.63-66.
-
(1994)
Proc. Int. Workshop Numerical Modeling Processes and Devices Integrated Circuits (NUPADV)
, pp. 63-66
-
-
Bork, I.1
Jungemann, C.2
Meinerzhagen, B.3
Engl, W.L.4
-
132
-
-
0036773423
-
Revision of the standard hydrodynamic transport model for SOI simulation
-
Oct.
-
M. Gritsch, H. Kosina, T. Grasser, and S. Selberherr, "Revision of the standard hydrodynamic transport model for SOI simulation," IEEE Trans. Electron Devices, vol. 49, pp. 1814-1820, Oct. 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 1814-1820
-
-
Gritsch, M.1
Kosina, H.2
Grasser, T.3
Selberherr, S.4
-
133
-
-
0036609955
-
On the applicability of nonself-consistent Monte Carlo device simulations
-
June
-
C. Jungeman and B. Meinerzhagen, "On the applicability of nonself-consistent Monte Carlo device simulations," IEEE Trans. Electron Devices, vol. 49, pp. 1072-1074, June 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 1072-1074
-
-
Jungeman, C.1
Meinerzhagen, B.2
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