In situ structural characterization of metal-molecule-silicon junctions using backside infrared spectroscopy

Journal of Physical Chemistry C

Volumn 112, Issue 36, 2008, Pages 14021-14026

  Scott, Adina ^a   Hacker, Christina A ^b   Janes, David B ^a  

^a PURDUE UNIVERSITY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GOLD EVAPORATION; IN-SITU; METALLIZATION; MOLECULAR LAYERS; MOLECULAR MONOLAYERS; MOLECULAR SIGNATURES; P-POLARIZED; SILICON OXIDES; STRUCTURAL CHARACTERIZATIONS; SURFACE SILICON; TIME EVOLUTIONS; TRANSMISSION MODES; VIBRATIONAL SIGNATURES;

AROMATIC COMPOUNDS; ELECTRON ENERGY LEVELS; EVAPORATION; GOLD; LITHOGRAPHY; METALLIZING; METALS; MOISTURE; NONMETALS; SELF ASSEMBLY; SILICA; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; STANDARDS; STRUCTURAL METALS; VAPORS;

INFRARED SPECTROSCOPY;

EID: 52649084772     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp801715s     Document Type: Article

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