Silicon-based molecular electronics

Nano Letters

Volumn 4, Issue 10, 2004, Pages 1803-1807

  Rakshit, Titash ^a   Liang, Geng Chiau ^a   Ghosh, Avik W ^a   Datta, Supriyo ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRONIC EQUIPMENT; HETEROJUNCTIONS; MOLECULAR DYNAMICS; RESONANT TUNNELING; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SUBSTRATES;

MOLECULAR ELECTRONICS; NEGATIVE DIFFERENTIAL RESISTANCE (NDR); RESONANT TUNNELING DIODES (RTD); SEMIEMPIRICAL TREATMENT;

SILICON;

SILICON;

ARTICLE; CHEMICAL BOND; CHEMICAL STRUCTURE; CHEMISTRY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRONICS; MOLECULE; POLARIZATION; SEMICONDUCTOR; THEORY;

EID: 7544243363     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl049436t     Document Type: Article

References (52)

1. Guisinger, N. et al. Nano Lett. 2004, 4, 55.
2. Guisinger, N. et al. Nanotechnology 2004, 15, S452.
3. Emberly, E. G.; Kirczenow, G. Phys. Rev. B 1998, 58, 10911. Yaliraki, S. N.; Ratner, M. A. J. Chem. Phys. 1998, 109, 5036. Taylor, J. et al. Phys. Rev. B 2001, 63, 245407. Di Ventra, M. et al. Phys. Rev. Lett. 2000, 84, 979. Ghosh, A. W. et al. cond-mat/0212166.
4. Emberly, E. G.; Kirczenow, G. Phys. Rev. B 1998, 58, 10911. Yaliraki, S. N.; Ratner, M. A. J. Chem. Phys. 1998, 109, 5036. Taylor, J. et al. Phys. Rev. B 2001, 63, 245407. Di Ventra, M. et al. Phys. Rev. Lett. 2000, 84, 979. Ghosh, A. W. et al. cond-mat/0212166.
5. Emberly, E. G.; Kirczenow, G. Phys. Rev. B 1998, 58, 10911. Yaliraki, S. N.; Ratner, M. A. J. Chem. Phys. 1998, 109, 5036. Taylor, J. et al. Phys. Rev. B 2001, 63, 245407. Di Ventra, M. et al. Phys. Rev. Lett. 2000, 84, 979. Ghosh, A. W. et al. cond-mat/0212166.
6. Emberly, E. G.; Kirczenow, G. Phys. Rev. B 1998, 58, 10911. Yaliraki, S. N.; Ratner, M. A. J. Chem. Phys. 1998, 109, 5036. Taylor, J. et al. Phys. Rev. B 2001, 63, 245407. Di Ventra, M. et al. Phys. Rev. Lett. 2000, 84, 979. Ghosh, A. W. et al. cond-mat/0212166.
7. Damle, P. S.; Ghosh, A. W.; Datta, S. Phys. Rev. B Rapid Commun. 2001, 64, 201403 R. Damle, P. S.; Ghosh, A. W.; Datta, S. Chem. Phys. 2002, 281, 171.
8. Damle, P. S.; Ghosh, A. W.; Datta, S. Phys. Rev. B Rapid Commun. 2001, 64, 201403 R. Damle, P. S.; Ghosh, A. W.; Datta, S. Chem. Phys. 2002, 281, 171.
9. Reed, M. A., et al. Science 1997, 278, 252. Chen, J. et al. Science 1999, 286, 1550. Porath, D., et al. Nature 2000, 403, 635. Reichert, J., et al. Phys. Rev. Lett. 2002, 88, 176804. Cui, X. D., et al. Science 2001, 294, 571. Tian, W., et al. J. Chem. Phys. 1998, 109, 2874.
10. Reed, M. A., et al. Science 1997, 278, 252. Chen, J. et al. Science 1999, 286, 1550. Porath, D., et al. Nature 2000, 403, 635. Reichert, J., et al. Phys. Rev. Lett. 2002, 88, 176804. Cui, X. D., et al. Science 2001, 294, 571. Tian, W., et al. J. Chem. Phys. 1998, 109, 2874.
11. Reed, M. A., et al. Science 1997, 278, 252. Chen, J. et al. Science 1999, 286, 1550. Porath, D., et al. Nature 2000, 403, 635. Reichert, J., et al. Phys. Rev. Lett. 2002, 88, 176804. Cui, X. D., et al. Science 2001, 294, 571. Tian, W., et al. J. Chem. Phys. 1998, 109, 2874.
12. Reed, M. A., et al. Science 1997, 278, 252. Chen, J. et al. Science 1999, 286, 1550. Porath, D., et al. Nature 2000, 403, 635. Reichert, J., et al. Phys. Rev. Lett. 2002, 88, 176804. Cui, X. D., et al. Science 2001, 294, 571. Tian, W., et al. J. Chem. Phys. 1998, 109, 2874.
13. Reed, M. A., et al. Science 1997, 278, 252. Chen, J. et al. Science 1999, 286, 1550. Porath, D., et al. Nature 2000, 403, 635. Reichert, J., et al. Phys. Rev. Lett. 2002, 88, 176804. Cui, X. D., et al. Science 2001, 294, 571. Tian, W., et al. J. Chem. Phys. 1998, 109, 2874.
14. Reed, M. A., et al. Science 1997, 278, 252. Chen, J. et al. Science 1999, 286, 1550. Porath, D., et al. Nature 2000, 403, 635. Reichert, J., et al. Phys. Rev. Lett. 2002, 88, 176804. Cui, X. D., et al. Science 2001, 294, 571. Tian, W., et al. J. Chem. Phys. 1998, 109, 2874.
15. Wolkow, R. A.; Jpn. J. Appl. Phys. 1 2001, 40, 4378. Hersam, M. C., et al. Nanotechnology 2000, 11, 70. Lenfant, S., et al. Nano Lett. 2003, 3, 741. (
16. Wolkow, R. A.; Jpn. J. Appl. Phys. 1 2001, 40, 4378. Hersam, M. C., et al. Nanotechnology 2000, 11, 70. Lenfant, S., et al. Nano Lett. 2003, 3, 741. (
17. Wolkow, R. A.; Jpn. J. Appl. Phys. 1 2001, 40, 4378. Hersam, M. C., et al. Nanotechnology 2000, 11, 70. Lenfant, S., et al. Nano Lett. 2003, 3, 741. (
18. Mathews, R. H., et al. Proc. IEEE 1999, 87, 596.
19. Seabaugh, et al. IEDM'98 Technol. Dig.; pp 429-432.
20. 1 while cyclopentene and TEMPO do not.
21. Datta, S. Electronic Transport in Mesoscopic Systems; Cambridge University Press: Cambridge, 1995.
22. Büttiker, M. Phys. Rev. B 1986, 33, 3020.
23. Datta, S. Superlat. Microstruct. 2000, 28, 253.
24. Lundstrom, M. Fundamentals of carrier transport; Cambridge University Press: Cambridge, 2000.
25. Vogl, et al. J. Phys. Chem. Solids 1983, 44, 365.
26. Cerda', J.; Soria, F. Phys. Rev. 2000, B 61, 7965.
27. Ghosh, A. W., et al., unpublished.
28. Detailed results for bulk and surface structures on silicon will be described in a forthcoming publication.
29. Liu, Q.; Hoffman, R. J. Am. Chem. Soc. 1995, 117, 4082. Molotkov, S. N., et al. Surf. Sci. 1991, 259, 339. Pantelides, S. T.; Pollman, J. J. Vac. Sci. Technol. 1979, 16, 1340.
30. Liu, Q.; Hoffman, R. J. Am. Chem. Soc. 1995, 117, 4082. Molotkov, S. N., et al. Surf. Sci. 1991, 259, 339. Pantelides, S. T.; Pollman, J. J. Vac. Sci. Technol. 1979, 16, 1340.
31. Liu, Q.; Hoffman, R. J. Am. Chem. Soc. 1995, 117, 4082. Molotkov, S. N., et al. Surf. Sci. 1991, 259, 339. Pantelides, S. T.; Pollman, J. J. Vac. Sci. Technol. 1979, 16, 1340.
32. Hamers, R. J., et al. Phys. Rev. Lett. 1987, 59, 2071. Akiyama, R., et al. Phys. Rev. B 2000, 62, 2034.
33. Hamers, R. J., et al. Phys. Rev. Lett. 1987, 59, 2071. Akiyama, R., et al. Phys. Rev. B 2000, 62, 2034.
34. Chen, C. J. Introduction to Scanning Tunneling Microscopy, Oxford University Press: Oxford, 1993.
35. Frisch, M. J.; Trucks, G. W.; Schlegel, H. B.; Scuseria, G. E.; Robb, M. A.; Cheeseman, J. R.; Zakrzewski, V. G.; Montgomery, J. A., Jr.; Stratmann, R. E.; Burant, J. C.; Dapprich, S.; Millam, J. M.; Daniels, A. D.; Kudin, K. N.; Strain, M. C.; Farkas, O.; Tomasi, J.; Barone, V.; Cossi, M.; Cammi, R.; Mennucci, B.; Pomelli, C.; Adamo, C.; Clifford, S.; Ochterski, J.; Petersson, G. A.; Ayala, P. Y.; Cui, Q.; Morokuma, K.; Malick, D. K.; Rabuck, A. D.; Raghavachari, K.; Foresman, J. B.; Cioslowski, J.; Ortiz, J. V.; Stefanov, B. B.; Liu, G.; Liashenko, A.; Piskorz, P.; Komaromi, I.; Gomperts, R.; Martin, R. L.; Fox, D. J.; Keith, T.; Al-Laham, M. A.; Peng, C. Y.; Nanayakkara, A.; Gonzalez, C.; Challacombe, M.; Gill, P. M. W.; Johnson, B. G.; Chen, W.; Wong, M. W.; Andres, J. L.; Head-Gordon, M.; Replogle, E. S.; Pople, J. A. Gaussian 98, revision A.7; Gaussian, Inc.: Pittsburgh, PA, 1998.
36. Ghosh, A. W.; Datta, S. J. Comput. Electron. 2002, 1, 515. Liang, G. C.; Ghosh, A. W.; Paulsson, M.; Datta, S. Phys. Rev. B 2004, 69, 115302.
37. Ghosh, A. W.; Datta, S. J. Comput. Electron. 2002, 1, 515. Liang, G. C.; Ghosh, A. W.; Paulsson, M.; Datta, S. Phys. Rev. B 2004, 69, 115302.
38. TMA medici, two-dimensional device simulation program, version 4.0 user's manual; Technology Modeling Associates, Inc.: Sunnyvale, CA, 1997.
39. Sze, S. M. Physics of Semiconductor Devices; John Wiley and Sons: New York, 1983.
40. McEllistrem, M., et al. Phys. Rev. Lett. 1993, 70, 2471.
41. Zhu, X.-Y., et al. Langmuir 2000, 16, 6766.
42. Coulter, S. K., et al. J. Vac. Sci. Technol. A 2000, 18, 1965.
43. Hofer, W. A., et al. Chem. Phys. Lett. 2002, 365, 129.
44. 36
45. The molecular Si-bulk Si couplings are computed using cluster DFT for the EHT basis and are divided equally among the orbitals in the EM model. A more careful treatment is presented in ref 36.
46. Location and shape of specific features in an experimental measurement will depend sensitively on the actual geometry. For example, ref 1 uses clean Si with a different bonding (styrene cycloaddition), surface geometry (2 x 1), and band bending (restricted by surface states).
47. Kubatkin, S., et al. Nature 2003, 425, 698.
48. Lyo, I-W.; Avouris, Ph. Science 1989, 245, 1369.
49. Hersam, M., private communications.
50. Note that NDR arises due to "levels" slipping past a band edge, whether due to electronic levels moving rapidly at small tip separations (η ≈ 0.5) or more closely spaced levels of different origin (surface states/phonon sidebands) slipping slowly at larger tip separations (η ≪ 1).
51. Rakshit, T.; Liang, G-C.; Ghosh, A. W.; Datta, S., unpublished.
52. Berkowitz, H. L.; Lux, R. A. J. Vac. Sci. Technol. B 1987, 5, 967.