Interface characterization of molecular-monolayer/SiO2 based molecular junctions

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 1088-1096

  Richter, C A ^a   Hacker, C A ^a   Richter, L J ^a   Kirillov, O A ^a   Suehle, J S ^a   Vogel, E M ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Capacitance voltage; Current voltage; FTIR; Molecular electronics; Negative differential resistance; Self assembled monolayer

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MONOLAYERS; SELF ASSEMBLY; SPECTROSCOPIC ANALYSIS;

CAPACITANCE-VOLTAGE; MOLECULAR ELECTRONICS; NEGATIVE-DIFFERENTIAL-RESISTANCE; SELF-ASSEMBLED MONOLAYERS;

SEMICONDUCTOR JUNCTIONS;

EID: 33745755208     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.037     Document Type: Article

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