A fast measurement technique of MOSFET Id-Vg characteristics

IEEE Electron Device Letters

Volumn 27, Issue 1, 2006, Pages 55-57

  Shen, C ^a   Li, M F ^a,b   Wang, X P ^a   Yeo, Yee Chia ^a   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

CMOSFETs; Reliability; Semiconductor device measurements; Trapping

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THRESHOLD VOLTAGE; ULTRAFAST PHENOMENA;

CHARGE TRAPPING EFFECT; GATE DIELECTRIC; ULTRAFAST MEASUREMENT METHOD;

MOSFET DEVICES;

EID: 33645462580     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.861025     Document Type: Article

References (5)

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