Low temperature characterization of effective mobility in uniaxially and biaxially strained nMOSFETs

Solid-State Electronics

Volumn 50, Issue 4, 2006, Pages 644-649

  Lime, F ^a   Andrieu, F ^b   Derix, J ^a   Ghibaudo, G ^a   Boeuf, F ^c   Skotnicki, T ^c  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COULOMB BLOCKADE; GAIN CONTROL; LIGHT SCATTERING; LOW TEMPERATURE EFFECTS; STRAIN;

COULOMB SCATTERING; DEPOPULATION; GAIN REDUCTION; MOBILITY GAIN;

MOSFET DEVICES;

EID: 33646520099     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.036     Document Type: Article

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