Novel approach to MOS inversion layer mobility characterization with advanced split C-V and hall factor analyses

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Toriumi, Akira ^a   Kita, Koji ^a   Irie, Hiroshi ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; FACE RECOGNITION; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HALL MOBILITY; MOSFET DEVICES;

C-V TECHNIQUE; HALL FACTOR; INVERSION LAYER MOBILITY; MATTHIESSEN'S RULE; PARASITIC EFFECTS; SHORT CHANNEL MOSFETS;

MAGNETIC FIELD EFFECTS;

EID: 46049109553     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346874     Document Type: Conference Paper

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