Profile evolution and nanometre-scale linewidth control during etching of polysilicon gates in high-density plasmas

Plasma Sources Science and Technology

Volumn 12, Issue 4, 2003, Pages

  Tuda, Mutumi ^a   Shintani, Kenji ^a   Tanimura, Junji ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRON CYCLOTRON RESONANCE; ETCHING; PLASMA DENSITY; PLASMA DEVICES; POLYSILICON; SILICON COMPOUNDS; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA REACTOR; PLASMA SURFACE INTERACTION; POLYSILICON GATES;

GATES (TRANSISTOR);

EID: 0344584531     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/12/4/022     Document Type: Article

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