Local interface composition and native stacking fault density in ZnSe/GaAs(001) heterostructures

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2592-2602

  Colli, A ^a,b,c   Carlino, E ^a   Pelucchi, E ^a,d   Grillo, V ^a   Franciosi, A ^a,c  

^a LABORATORIO TASC   (Italy)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF TRIESTE   (Italy)

^d EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); NUCLEATION; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STACKING FAULTS; SURFACE PHENOMENA; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

EPILAYERS; FREE SURFACE; INTERFACE COMPOSITION; MIGRATION-ENHANCED EPITAXY (MEE);

HETEROJUNCTIONS;

EID: 4944239548     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1769102     Document Type: Article

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