Persistent sourcing of coherent spins for multifunctional semiconductor spintronics

Nature

Volumn 411, Issue 6839, 2001, Pages 770-772

  Malajovich, I ^a   Berry, J J ^b   Samarth, N ^b   Awschalom, D D ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; ZINC DERIVATIVE;

ACCELERATION; ARTICLE; CHEMICAL STRUCTURE; ELECTRIC FIELD; MAGNETIC FIELD; MAGNETISM; PRIORITY JOURNAL; ROTATION; SEMICONDUCTOR;

EID: 0035859045     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/35081014     Document Type: Article

References (12)

1. Lateral drag of spin coherence in gallium arsenide
2. Room-temperature spin memory in two-dimensional electron gases
3. Resonant spin amplification in n-type GaAs
4. Spin polarized transport
5. Spin injection and the local hall effect in InAs quantum wells
6. Experimental search for the electrical spin injection in a semiconductor
7. Injection and detection of a spin-polarized current in a light-emitting diode
8. Electrical spin injection in a ferromagnetic semiconductor heterostructure
9. Coherent transfer of spin through a semiconductor heterointerface
10. Interface quantum well states observed by three-wave mixing in ZnSe/GaAs heterostructures
11. Non-metal in situ and ex situ ohmic contacts to a n-ZnSe
12. Resonant amplification of spin transferred across a GaAs/ZnSe interface