Controlling the native stacking fault density in II-VI/III-V heterostructures

Applied Physics Letters

Volumn 83, Issue 1, 2003, Pages 81-83

  Colli, A ^a,b   Pelucchi, E ^a,c   Franciosi, A ^a,b  

^a LABORATORIO TASC   (Italy)

^b UNIVERSITY OF TRIESTE   (Italy)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); NUCLEATION; OPTOELECTRONIC DEVICES; STACKING FAULTS;

STACKING FAULT DENSITIES;

HETEROJUNCTIONS;

EID: 0042341512     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1589195     Document Type: Article

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19. We caution the reader that there are important differences between the growth procedures employed in Ref. 7 and those studied here, even for samples with Se-rich interfaces produced through the use of low Zn/Se beam pressure ratios (procedure B). The use of two different Se sources in the present study allowed us to change the BPR during growth in a few seconds. The Se-rich samples in Ref. 7 were subjected, instead, to lengthy growth interruptions in order to allow for the BPR to stabilize and, in general, were found to contain higher densities of extended defects.