Investigation of the early stages of ZnSe epitaxy on GaAs(001) via scanning tunneling microscopy

Applied Physics Letters

Volumn 71, Issue 15, 1997, Pages 2178-2180

  Ahsan, S ^a,c   Kahn, A ^a   Pashley, M D ^b  

^a Princeton University   (United States)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c LINEAR TECHNOLOGY CORP   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DEPOSITION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION EXCHANGE; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; STACKING FAULTS;

ATOMIC RESOLUTION IMAGING; EXCHANGE REACTION; STACKING FAULT DENSITY; ZINC SELENIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031247004     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119373     Document Type: Article

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