Dislocation densities in MBE grown ZnSe epitaxial layers on GaAs by HRXRD

Journal of Crystal Growth

Volumn 194, Issue 3-4, 1998, Pages 301-308

  Constantino, M E ^a   Vidal, M A ^a   Salazar Hernandez B ^a   Navarro Contreras, H ^a   Lopez Lopez M ^b   Melendez M ^b   Hernandez Calderon I ^b  

^a INSTITUTO DE INVESTIGACIÓN EN COMUNICACIÓN ÓPTICA   (Mexico)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

Dislocation; X ray diffraction; ZnSe GaAs heterostructures

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITIES; EPITAXIAL LAYERS;

HETEROJUNCTIONS;

EID: 0032303140     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00731-3     Document Type: Article

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