Structural and electronic properties of Ga2Se3

Journal of Applied Physics

Volumn 83, Issue 6, 1998, Pages 3092-3095

  Peressi, M ^b   Baldereschi, A ^a  

^a EPFL   (Switzerland)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001216866     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367066     Document Type: Article

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