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Volumn 14, Issue 6, 1996, Pages 3135-3143

Chemical bonding and electronic properties of Se-rich ZnSe-GaAs(001) interfaces

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0030504672     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580182     Document Type: Article
Times cited : (11)

References (45)
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    • A. Raisanen, G. Haugstad, X. Yu, and A. Franciosi, J. Appl. Phys. 72, 1104 (1992); 70, 3115 (1991).
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    • in press
    • A. Franciosi and C. G. Van de Walle, Surf. Sci. Reports (in press); G. Margaritondo and P. Perfetti, in Heterojunction Band Discontinuities: Physics and Device Applications, edited by F. Capasso and G. Margaritondo (North Holland, Amsterdam, 1987) Chap. 2.
    • Surf. Sci. Reports
    • Franciosi, A.1    Van De Walle, C.G.2
  • 41
    • 84914046579 scopus 로고
    • D.-W. Tu and A. Kahn, J. Vac. Sci. Technol. A 2, 511 (1984); 3, 922 (1985); A. C. Wright and J. O. Williams, J. Cryst. Growth 114, 99 (1991).
    • (1984) J. Vac. Sci. Technol. A , vol.2 , pp. 511
    • Tu, D.-W.1    Kahn, A.2
  • 42
    • 84912968369 scopus 로고
    • D.-W. Tu and A. Kahn, J. Vac. Sci. Technol. A 2, 511 (1984); 3, 922 (1985); A. C. Wright and J. O. Williams, J. Cryst. Growth 114, 99 (1991).
    • (1985) J. Vac. Sci. Technol. A , vol.3 , pp. 922
  • 43
    • 0026238976 scopus 로고
    • D.-W. Tu and A. Kahn, J. Vac. Sci. Technol. A 2, 511 (1984); 3, 922 (1985); A. C. Wright and J. O. Williams, J. Cryst. Growth 114, 99 (1991).
    • (1991) J. Cryst. Growth , vol.114 , pp. 99
    • Wright, A.C.1    Williams, J.O.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.