Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics

Applied Physics Letters

Volumn 80, Issue 20, 2002, Pages 3766-3768

  Grabs, P ^a   Richter, G ^a   Fiederling, R ^a   Becker, C R ^a   Ossau, W ^a   Schmidt, G ^a   Molenkamp, L W ^a   Weigand, W ^a   Umbach, E ^a   Sedova, I V ^b   Ivanov, S V ^b  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYER QUALITY; GROWTH CHARACTERISTIC; INAS; MATERIAL SYSTEMS; TWO-MATERIALS;

EPITAXIAL GROWTH; INDIUM ARSENIDE; MAGNETOELECTRONICS; MANGANESE; NANOTECHNOLOGY; ZINC COMPOUNDS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 79956009446     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1477933     Document Type: Article

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