Stacking faults in pseudomorphic ZnSe-GaAs and lattice-matched ZnSe-In0.04Ga0.96As layers

Philosophical Magazine Letters

Volumn 75, Issue 4, 1997, Pages 219-226

  Bonard, Jean Marc ^a   Ganière, Jean Daniel ^a   Heun, Stefan ^b,c   Paggel, Jens J ^b,c,d   Rubini, Silvia ^b,c   Sorba, Lucia ^b,c,e   Franciosi, Alfonso ^b,c,f  

^a EPFL   (Switzerland)

^b LABORATORIO TASC   (Italy)

^c University of Minnesota   (United States)

^d PHILIPPS UNIVERSITY MARBURG   (Germany)

^e CNR   (Italy)

^f UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

FRANK STACKING FAULTS; SHOCKLEY STACKING FAULTS;

HETEROJUNCTIONS;

EID: 0031125343     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/095008397179642     Document Type: Article

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