Influence of the interface layer on the strain relaxation of ZnSe epitaxial layers grown by MBE on (001)GaAs

Journal of Physics D: Applied Physics

Volumn 32, Issue 10 A, 1999, Pages

  Giannini, C ^a   Carlino, E ^a   Sciacovelli, P ^a   Tapfer, L ^a   Sauvage Simkin, M ^b,c   Garreau, Y ^b   Jedrecy, N ^b,c   Veron M B ^b   Pinchaux, R ^b,d  

^a Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

^d SORBONNE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STACKING FAULTS; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GRAZING INCIDENCE X RAY DIFFRACTION; RECIPROCAL SPACE MAPPING; STOICHIOMETRIC EPILAYER; STRAIN RELAXATION; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0032669519     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/10A/311     Document Type: Article

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