Oxidation of SiC investigated by ellipsometry and Rutherford backscattering spectrometry

Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

  Szilagyi E ^a   Petrik, P ^b   Lohner, T ^b   Koos A A ^b   Fried, M ^b   Battistig, G ^b  

^a WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; ATMOSPHERICS; ATOMIC FORCE MICROSCOPY; BACKSCATTERING; CHEMICAL OXYGEN DEMAND; ELLIPSOMETRY; IMAGING TECHNIQUES; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; NONMETALS; OPTICAL PROPERTIES; ORGANIC POLYMERS; OXIDATION; OXYGEN; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING PROBE MICROSCOPY; SCATTERING; SILICON; SILICON CARBIDE; SPECTROMETERS; SPECTROMETRY; SPECTROSCOPIC ELLIPSOMETRY; SURFACE ROUGHNESS;

AMERICAN INSTITUTE OF PHYSICS (AIP); ATOMIC FORCE (AF); BULK DENSITY (BD); DEAL GROVE MODELS; LAYER MODEL; LAYER THICKNESSES; OXIDATION TIME; OXIDATION-KINETICS; OXIDE LAYERS; PRESSURE DEPENDENCE; PURE SILICON; ROUGHNESS RATIO; RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS); SPECTRA (CO); THICKNESS RATIOS; TRANSITION LAYERS; TWO-LAYER MODELS;

OXIDE FILMS;

EID: 47749143245     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2949268     Document Type: Article

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