Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 574-578

  Vickridge, I C ^a   Tromson, D ^a   Trimaille, I ^a   Ganem, J J ^a   Szilagyi E ^b   Battistig, G ^c  

^a SORBONNE UNIVERSITÉ   (France)

^b WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Isotopic tracing; Oxidation mechanisms; Silicon carbide

Indexed keywords

BAND STRUCTURE; OXYGEN; PRESSURE EFFECTS; REACTION KINETICS; SILICA; THERMAL EFFECTS; THERMOOXIDATION;

DRY THERMAL OXIDATION;

SILICON CARBIDE;

EID: 0036569416     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01303-9     Document Type: Conference Paper

References (14)