Kinetics of oxynitridation of 6H-SiC(1 1 over(2, ̄) 0) and the interface structure analyzed by ion scattering and photoelectron spectroscopy

Surface Science

Volumn 601, Issue 3, 2007, Pages 706-713

  Okawa, T ^a   Fukuyama, R ^a   Hoshino, Y ^b   Nishimura, T ^a   Kido, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

Medium energy ion scattering (MEIS); Nitrogen oxide; Photoelectron spectroscopy; Semiconductor insulator interface; Silicon carbide; Surface chemical reaction

Indexed keywords

INTERFACES (MATERIALS); LIGHT SCATTERING; NITROGEN OXIDES; PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDE; SYNCHROTRON RADIATION;

INTERFACE STRUCTURES; MEDIUM ENERGY ION SCATTERING (MEIS); SEMICONDUCTOR INSULATOR INTERFACE; SURFACE CHEMICAL REACTION;

SURFACE STRUCTURE;

EID: 33846396093     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.10.035     Document Type: Article

References (27)

1. Fukuda K., Suzuki S., Tanaka T., and Arai K. Appl. Phys. Lett. 76 (2000) 1585
2. Chang K.C., Nuhfer N.T., Porter L.M., and Wahab Q. Appl. Phys. Lett. 77 (2000) 2186
3. Song Y., Dhar S., Feldman L.C., Chung Q., and Williams J.R. J. Appl. Phys. 95 (2004) 4953
4. Radtke C., Baumvol I.J.R., Ferrera B.C., and Stedile F.C. Appl. Phys. Lett. 85 (2004) 3402
5. Song Y., Dhar S., Feldman L.C., Chung G., and Williams J.R. J. Appl. Phys. 95 (2004) 4953
6. Vickridge I.C., Tromson D., Trimaille I., Ganem J.-J., Szilágyi E., and Battistig G. Nucl. Instrum. Methods B 190 (2002) 574
7. Chung G.Y., Williams J.R., Smith T.I., Ren F., McDonald K., and Feldman L.C. Appl. Phys. Lett. 81 (2002) 4266
8. McDonald K., Feldman L.C., Weller R.A., Chung G.Y., Tin C.C., and Williams J.R. J. Appl. Phys. 93 (2003) 2257
9. McDonald K., Weller R.A., Pantelides S.T., Feldman L.C., Chung G.Y., Tin C.C., and Williams J.R. J. Appl. Phys. 93 (2003) 2719
10. Dhar S., Song Y.W., Feldman L.C., Smith T.I., Tin C.C., Williams J.R., Chung G., Nishimura T., Starodub D., Gustafsson T., and Garfunkel E. Appl. Phys. Lett. 84 (2004) 1498
11. Chen Z.Y., Kimoto T., and Matsunami H. Jpn. J. Appl. Phys. 38 (1999) L1375
12. Yano H., Hirao T., Kimoto T., and Matsunami H. Jpn. J. Appl. Phys. 39 (2000) 2008
13. Hoshino Y., Matsumoto S., Ogawa K., Namba H., and Kido Y. Phys. Rev. B 68 (2003) 073308
14. El-Kareh B. Fundamentals of Semiconductor Processing Technologies (1995), Kluwer, Boston
15. Johansson L.I., Virojanadara C., Eickhoff Th., and Drube W. Surf. Sci. 552 (2004) 251
16. Hoffmann P., and Schmeisser D. Nucl. Instrum. Methods B 246 (2006) 85
17. Lu H.C., Gusev E.P., Gustafsson T., Garfunkel E., Green M.L., Brasen D., and Feldman L.C. Appl. Phys. Lett. 69 (1996) 2713
18. Lu H.C., Gusev E.P., Gustafsson T., Brasen D., Green M.L., and Garfunkel E. Microelectron. Eng. 36 (1997) 29
19. Chang J.P., Green M.L., Donnelly V.M., Opila R.L., Eng Jr. J., Sapjeta J., Silverman P.J., Weir B., Lu H.C., Gustafsson T., and Garfunkel E. J. Appl. Phys. 87 (2000) 4449
20. Carr E.C., Ellis K.A., and Buhrman R.A. Appl. Phys. Lett. 66 (1995) 1492
21. Saks N.S., Ma D.I., and Fowler W.B. Appl. Phys. Lett. 67 (1995) 374
22. Lu H.C., Gusev E.P., Gustafsson T., Brasen D., Green M.L., and Garfunkel E. Microelctron. Eng. 36 (1997) 29
23. Hoshino Y., Matsumoto S., and Kido Y. Surf. Sci. 531 (2003) 295
24. Hoshino Y., Fukuyama R., and Kido Y. Phys. Rev. B 70 (2004) 165303
25. Virojanadara C., and Johansson L.I. Surf. Sci. 530 (2003) 17
26. Lu Z.H., Hussey R.J., Graham M.J., Cao R., and Tay S.P. J. Vac. Sci. Technol. B 14 (1996) 2882
27. Radtke C., Enriquez H., Arnault J.C., Soukiassian P., Moras P., Crotti C., and Perfetti P. Appl. Phys. Lett. 87 (2006) 193110