Real-time analysis of UV laser-induced growth of ultrathin oxide films on silicon by spectroscopic ellipsometry

Applied Surface Science

Volumn 247, Issue 1-4, 2005, Pages 204-210

  Patzner, Patrik ^a   Osipov, Andrey V ^b   Hess, Peter ^a  

^a UNIVERSITY OF HEIDELBERG   (Germany)

^b INSTITUTE OF PROBLEMS OF MECHANICAL ENGINEERING   (Russian Federation)

Author keywords

Amorphous silicon oxide; Real time analysis; Spectroscopic ellipsometry

Indexed keywords

ELLIPSOMETRY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; OXIDATION; SILICON; ULTRATHIN FILMS; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON OXIDES; LOW TEMPERATURE OXIDATION; REAL TIME ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY;

LASER BEAM EFFECTS;

EID: 19744369443     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.01.157     Document Type: Article

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