Oxygen isotopic tracing study of the dry thermal oxidation of 6H SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 462-466

  Vickridge, I C ^a   Ganem, J J ^a   Battistig, G ^b   Szilagyi, E ^c  

^a INSTITUT DES NANOSCIENCES DE PARIS   (France)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHARGE TRANSFER; COMPOSITE MATERIALS; DIELECTRIC MATERIALS; ELECTRON RESONANCE; ISOTOPES; OXIDES; OXYGEN; REACTION KINETICS; THERMOOXIDATION; TRACE ANALYSIS;

NUCLEAR RESONANCE PROFILING; OXIDATION MECHANISM; OXYGEN ISOTOPIC TRACING; THIN DIELECTRICS;

SILICON CARBIDE;

EID: 0033871274     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00931-3     Document Type: Article

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