Pressure dependence of SiO2 growth kinetics and electrical properties on SiC

Journal of Applied Physics

Volumn 103, Issue 2, 2008, Pages

  Ray, E A ^a,c   Rozen, John ^a   Dhar, Sarit ^a   Feldman, L C ^a   Williams, J R ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDE GROWTH RATES; PARABOLIC CONSTANTS;

CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; OXIDATION; PRESSURE EFFECTS; SILICA; SILICON CARBIDE;

GROWTH KINETICS;

EID: 38849098340     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2832408     Document Type: Article

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