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Volumn 15, Issue 11, 2004, Pages 705-710

Fabrication of epitaxial III-nitride cantilivers on silicon (1 1 1) substrates

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL STRUCTURE; DRY ETCHING; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

EID: 4644327215     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:JMSE.0000043416.67986.10     Document Type: Article
Times cited : (3)

References (29)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.