Microdisk laser structures formed in III-V nitride epilayers

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 353-357

  Zavada, J M ^a   Abernathy, C R ^b   Pearton, S J ^b   Mackenzie, J D ^b   Mileham, J R ^b   Wilson, R G ^c   Schwartz, R N ^c   Haggerott Crawford, M ^d   Shul, R J ^d   Kilcoyne, S P ^d   Zhang, D ^e   Kolbas, R M ^e  

^a U S ARMY RESEARCH OFFICE   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c Hughes Aircraft Co   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

^e NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ERBIUM; ETCHING; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS;

ALUMINUM NITRIDE (ALN) BUFFER; MICRODISK LASER STRUCTURE;

OPTICAL RESONATORS;

EID: 0031075403     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00244-4     Document Type: Article

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