ECR-MBE and GSMBE of gallium nitride on Si(111)

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 145-150

  Rossner, U ^a   Rouviere, J L ^a   Bourret, A ^a   Barski, A ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON CYCLOTRON RESONANCE; ELECTRON EMISSION; ENERGY GAP; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SILICON; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE; GAS SOURCE MOLECULAR BEAM EPITAXY; LATTICE MISMATCH; QUASI TWO DIMENSIONAL GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029766446     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)