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Journal of Physics D: Applied Physics

Volumn 35, Issue 7, 2002, Pages 620-624

Chemical beam epitaxy of GaN on Si (111) using AlAs buffer layers

(5) Huang, T S a Joyce, T B a Murray, R T a Papworth, A J a Chalker, P R a

a UNIVERSITY OF LIVERPOOL (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; DIFFRACTION; ENERGY GAP; MICROELECTROMECHANICAL DEVICES; NITRIDING; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYER; LONGITUDINAL OPTICAL; MACROSCOPIC EVOLUTION; NANOSCALE COLUMNAR STRUCTURE; NEAR BAND GAP LUMINESCENCE; NITRIDATION; TRANSVERSE OPTICAL;

GALLIUM NITRIDE;

EID: 0037035261 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/35/7/309 Document Type: Article

Times cited : (4)

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