SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 208-209, Issue 1, 2003, Pages 676-681

Hafnium oxide layers derived by photo-assisted sol-gel processing

(5) Yu, J J a Fang, Q a Zhang, J Y b Wang, Z M b Boyd, I W a

a UNIVERSITY COLLEGE LONDON (United Kingdom)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

Excimer lamp; HfO 2; High k dielectrics; Sol gel processing; Thin film

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; LIGHT TRANSMISSION; OXIDATION; REFRACTIVE INDEX; SILICATES; SOL-GELS; STOICHIOMETRY; THERMAL EFFECTS; ANNEALING; CHEMICAL VAPOR DEPOSITION; IRRADIATION; PERMITTIVITY; SPUTTERING; ULTRAVIOLET RADIATION;

EXCIMER LAMPS; ATOMIC LAYER DEPOSITION (ALD);

THIN FILMS;

EID: 0037443270 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(02)01424-1 Document Type: Conference Paper

Times cited : (33)

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