Material microcharacterization of sol-gel derived HfO2 thin films on silicon wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 10, 2004, Pages 6992-6993

  Shimizu, Hirofumi ^a   Asayama, Kyoichiro ^a,b   Kawai, Naoyuki ^a,b   Nishide, Toshikazu ^a  

^a NIHON UNIVERSITY   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRON BEAMS; EPITAXIAL GROWTH; HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; NANOTECHNOLOGY; PERMITTIVITY; SILICON WAFERS; SOL-GELS; TRANSMISSION ELECTRON MICROSCOPY; ULSI CIRCUITS;

FACE CENTERED CUBIC (FCC) STRUCTURE; GATE INSULATORS; METAL-OXIDE SEMICONDUCTORS; SOL-GEL DERIVED HFO2 FILM;

THIN FILMS;

EID: 10844247833     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6992     Document Type: Article

References (10)

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