Organic thin film transistors with HfO2 high-k gate dielectric grown by anodic oxidation or deposited by sol-gel

Microelectronics Reliability

Volumn 47, Issue 2-3, 2007, Pages 372-377

  Tardy, J ^a   Erouel, M ^a   Deman, A L ^a   Gagnaire, A ^a   Teodorescu, V ^b,c   Blanchin, M G ^b   Canut, B ^b   Barau, A ^d   Zaharescu, M ^d  

^a ECOLE CENTRALE DE LYON   (France)

^b UNIVERSITÉ LYON 1   (France)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^d INSTITUTE OF PHYSICAL CHEMISTRY   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; DIELECTRIC DEVICES; ELECTRIC PROPERTIES; ELECTRODEPOSITION; HAFNIUM COMPOUNDS; SOL-GELS;

ANODIZATION; PENTACENE; PLASTIC SUBSTRATES; SOL GEL DEPOSITED OXIDE FILMS;

THIN FILM TRANSISTORS;

EID: 33846571443     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.01.012     Document Type: Article

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