Photoelectron spectroscopy study of the effect of substrate doping on an HfO2/SiO2/n-Si gate stack

Journal of Non-Crystalline Solids

Volumn 353, Issue 5-7, 2007, Pages 635-638

  Barrett, N ^a   Renault, O ^b   Damlencourt, J F ^b   Maccherozzi, F ^c   Fabrizioli, M ^c  

^a CEA SACLAY   (France)

^b CEA LETI   (France)

^c LABORATORIO TASC   (Italy)

Author keywords

Band structure; Dielectric properties, relaxation, electric modulus; Silicon; Synchrotron radiation; UPS XPS; XPS

Indexed keywords

BAND STRUCTURE; DOPING (ADDITIVES); SILICON; SUBSTRATES; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE OXIDES; SUBSTRATE DOPING; SUBSTRATE ELECTRONS;

BINDING ENERGY;

EID: 33847364308     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.11.013     Document Type: Article

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