Atomic Layer Deposition of hafnium based gate dielectric layers for CMOS applications

ECS Transactions

Volumn 11, Issue 7, 2007, Pages 227-241

  Delabie, A ^a   Nyns, L ^a   Bellenger, F ^a   Caymax, M ^a   Conard, T ^a   Franquet, A ^a   Houssa, M ^a   Lin, D ^a   Meuris, M ^a   Ragnarsson, L A ^a   Sioncke, S ^a   Swerts, J ^b   Fedorenko, Y ^b   Maes, J W ^b   Van Elshocht, S ^a   De Gendt, S ^a,c  

^a IMEC   (Belgium)

^b ASMB   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHEMISORPTION; CHLORINE COMPOUNDS; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; GALLIUM ARSENIDE; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; SILICATES; SODIUM ALUMINATE; SUBSTRATES; SURFACE REACTIONS; ZIRCONIUM COMPOUNDS;

CONTROLLED REACTIONS; DIELECTRIC OXIDES; GATE DIELECTRIC LAYERS; GROWTH BEHAVIOR; HAFNIUM SILICATES; REACTION CYCLES; SUBSTRATE INHIBITION; TRANSISTOR CHANNELS;

ATOMIC LAYER DEPOSITION;

EID: 45549089698     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779086     Document Type: Conference Paper

References (50)

1. www.intel.com/technology/silicon/45nm_technology.htm
2. R. L. Puurunen, J. Appl. Phys., 97, 121301 (2005).
3. A. Delabie, M. Caymax, B. Brijs, D. P. Brunco, T. Conard, E. Sleeckx, S. Van Elshocht, L.-Å Ragnarsson, S. De Gendt, and M. M. Heyns, J. Electrochem. Soc., 153, F180 (2006)
4. P. D. Kirsch, M A Quevedo-Lopez, H. -J Li, Y. Senzaki, J. J. Peterson, S. C Song, S. A. Krishnan, N Moumen, J. Barnett, G. Bersuker, P. Y. Hung, B. H. Lee, T. Lafford, Q Wang, D. Gay, and J G. Ekerdt, J. Appl. Phys., 99, 023508 (2006).
5. D. H. Triyoso, R. I. Hegde, B. E. White, and P J. Tobin, J. Appl. Phys., 97, 124107 (2005).
6. M. L. Green, M.-Y Ho, B. Busch, G. D Wilk, T Sorsch, T. Conard, B. Brijs, W. Vandervorst, P. I. Räisänen, D. Muller, M. Bude, and J. Grazul, J. Appl. Phys., 91, 7168 (2002)
7. J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, and V. Sammelselg, Thin Solid Films, 340, 110 (1999).
8. A. Kytökivi,E.-L. Lakomaa, and A. Root, Langmuir, 12, 4395 (1996).
9. . E. P. Gusev, C. Cabral Jr, M. Copel, C. D'Emic, and M Gribelyuk, Microelectron. Eng., 69, 145 (2003).
10. S Ferrari, G. Scarel, C. Wiemer, and M. Fanciulli, J. Appl. Phys., 92, 7675 (2002).
11. D. Triyoso, R Liu, D. Roan, M Ramon, N. V. Edwards, R. Gregory, D Werho, J. Kulik, G. Tam, E. Irwin, X.-D Wang, L. B. La, C. Hobbs, R. Garcia, J Baker, B. E. White Jr, and P. Tobin, J. Electrochem. Soc., 151, F220 (2004).
12. O. Renault, D. Samour, D Rouchon, Ph. Holliger, A.-M. Papon, D. Blin, and S. Marthon, Thin Solid Films, 428, 190 (2003).
13. A. Esteve, ALD 2007 Conference (San Diego, USA, 2007).
14. A. Mukhopadhyay, J. F. Sanx, C. B. Musgrave, ALD 2007 Conference (San Diego, USA, 2007).
15. S. Haukka, M. Tuominen, E. Vainonen-Ahlgren, E. Tois, and W.-M. Li, 203th meeting of the Electrochemical Society, (Paris, France, 2003).
16. A. Delabie, M. Caymax, J. Maes, P. Bajolet, B. Brijs, E. Cartier, T. Conard, S. De Gendt, O. Richard, W Vandervorst, C Zhao, M. Green, W Tsai, and M. Heyns, Novel Materials and Processes for Advanced CMOS. MRS Symposium Proceedings (Boston, US., 2003) 745, p. 179.
17. D. Blin, N. Rochat, G Rolland, P. Holliger, F. Martin, J.-F. Damlencourt, T. Lardin, P. Besson, S. Haukka, and M.-N. Semeria, 203th meeting of the Electrochemical Society, (Paris, France, 2003).
18. A Satta, J. Schuhmacher, C. M. Whelan, W. Vandervorst, S. H. Brongersma, G. P Beyer, K. Maex, A. Vantomme, M. M. Viitanen, H. H. Brongersma, and W. F. A. Besling, J. Appl. Phys., 92, 7641 (2002).
19. R. L. Puurunen, Chem. Vap. Deposition, 9, 249 (2003).
20. R. L. Puurunen, J. Appl. Phys., 95, 4777 (2004).
21. T. Conard, W Vandervorst, J. Petry, C Zhao, W. Besling, H. Nohira, and O. Richard, Appl. Surf. Sci., 400, 203 (2003).
22. M. Houssa, B. De Jaeger, A Delabie, S Van Elshocht, V. Afanasiev, J Autran, A. Stesmans, M. Meuris, and M. Heyns, J. Non-Crystal. Solids, 351, 1902 (2005).
23. P. Zimmerman, G. Nicholas, B. De Jaeger, B. Kaczer, L-Å Ragnarsson, D.P. Brunco, F. E. Leys, M Caymax, G Winderickx, K. Opsomer, M. Meuris, and M M. Heyns, IEDM Technical Digest, Paper 26 1 (2006)
24. M M. Frank, S. J. Koester, M. Copel, J.A. Ott, V K. Paruchuri, H. Shang, and R. Loesing, Appl. Phys. Lett., 89, 112905 (2006).
25. M. Caymax, S. Van Elshocht, M. Houssa, A. Delabie, T. Conard, F. Bellenger, R. Bonzom, F. Leys, D. Nelis, M. Meuris, M. Heyns, D. Brunco, P. Zimmerman, and A. Dimoulas, E-MRS IUMRS ICEM Spring Meeting, 29 May-2 June 2006; Nice, France
26. A. Delabie, F. Bellenger, M. Houssa, T. Conard, S. Van Elshocht, M. Caymax, M. Heyns and M. Meuris, 7th Conference on Atomic Layer Deposition, June 24-27, 2007, San Diego.
27. F. Bellenger, M. Houssa, A Delabie, T Conard, M Caymax, M Meuris, K De Meyer, and M.M. Heyns, ECS 2007 Conference, October 7-12, 2007, Washington.
28. D. H. Triyoso, R. I. Hegde, J K. Schaeffer, D. Roan, P J. Tobm, S. B Samavedam, B. E White, R Gregory, and X. D. Wang, Appl. Phys. Lett., 88, 222901 (2006).
29. G D Wilk, R M Wallace, and J M. Anthony, J, Appl. Phys., 87, 484 (2000).
30. M Y. Ho, H Gong, G. D. Wilk, B. W Busch, M. L. Green, W. H. Lin, A. See, S. K. Lahiri, M. E. Loomans, P. I. Raisanen, and T Gustafsson, Appl. Phys. Lett., 81, 4218 (2002).
31. X P Wang et al, VLSI Symp. Tech. Dig., 2006.
32. L.-Å. Ragnarsson, V S. Chang, H Y. Yu, H -J. Cho, T Conard, K M. Yin, A. Delabie, J. Swerts, T. Schram, S. De Gendt, and S Biesemans, IEEE Electron Dev. Lett., 28, 486 (2007).
33. PULSAR is a trademark of ASM International
34. M Meuris, P. W. Mertens, A Opdebeeck, H. F. Schmidt, M. Depas, G. Vereecke, M. M. Heyns, and A. Philipossian, Solid State Technol., 38, 109 (1995).
35. B Onsia, M Caymax, T Conard, S De Gendt, F. De Smedt, A. Delabie, C. Gottschalk, M. Green, M. Heyns, S. Lin, P. Mertens, W. Tsai, and C. Vinckier, Solid State Phenomena, 103-104, 19 (2005).
36. B Onsia and I. Teerlinck, US Patent 20050176260.
37. A. Delabie, R. L. Puurunen, B. Bnjs, M Caymax, T. Conard, B. Onsia, O Richard, W. Vandervorst, C Zhao, M. M. Heyns, M. Meuris, M. Viitanan, H Brongersma, M de Ridder, L. Goncharova, E. Garfunkel, T. Gustafsson, and W. Tsai, J. Appl. Phys., 97, 064104 (2005).
38. R. L Puurunen, Chem. Vap. Dep., 11, 79 (2005).
39. T. Conard, W. Vandervorst, J. Petry, C. Zhao, W. Besling, H. Nohira, and O. Richard, Appl. Surf. Sci., 400, 203 (2003).
40. G. Hollinger, R Skheyta-Kabbam, and M Gendry, Phys. Rev. B, 49, 11159 (1994).
41. C.-H. Chang, Y.-K. Chiou, Y.-C. Chang, K.-Y. Lee, T-D Lm, T.-B Wu, M. Hong and J. Kwo, Appl. Phys. Lett., 89, 242911
42. M L. Huang, Y. C. Chang, C H Chang, T. D. Lin, J. Kwo, T B. Wu and M Hong, Appl. Phys. Lett., 89, 012903 (2006).
43. M. L. Huang, Y. C. Chang, C. H. Chang, Y. J Lee, P. Chang, J. Kwo, T B. Wu and M. Hong, Appl. Phys. Lett., 87, 252104 (2005).
44. M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. Chabal, J. Grazul, and D. A. Muller, Appl. Phys. Lett., 86, 152904 (2005).
45. A. Delabie, G. Pourtois, M Caymax, S. De Gendt, L.-A. Ragnarsson, M. Heyns, Y. Fedorenko, J. Swerts, and J. W. Maes, J. Vacuum Sci. Technol. A, 4, 1302 (2007).
46. Y. Fedorenko, J. Swerts, J. W. Maes, E. Tois, S. Haukka, C.-G. Wang, G. Wilk, A. Delabie, W. Deweerd, and S. De Gendt, Electrochem. Solid State Lett., 10, H149 (2007)
47. J. W. Klaus, A. W. Ott, J. M. Johnson, and S. M. George, Appl. Phys. Lett., 70, 1092 (1997).
48. O. Sneh, M. L. Wise, A. W. Ott, L. A. Okada, and S. M. George, Surface Science, 334, 135 (1995)
49. A. Mukhopadhyay, and C. B Musgrave, Chem. Phys. Lett., 421, 215 (2006).
50. J Ku Kang and C B. Musgrave, J. Appl. Phys., 91, 3408 (2002)