Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I-V characteristics

Solid State Communications

Volumn 147, Issue 1-2, 2008, Pages 31-35

  Croitoru, M D ^a   Gladilin, V N ^a,b,f   Fomin, V M ^a,c,f   Devreese, J T ^a,c   Magnus, W ^a,d   Schoenmaker, W ^e   Soree B ^d  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d IMEC   (Belgium)

^e MAGWEL   (Belgium)

^f Universitatea de Stat din Moldova   (Moldova)

Author keywords

A. Nanostructures; D. Electronic transport

Indexed keywords

ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS;

ACOUSTIC PHONONS; IONIZED IMPURITIES; SEMICONDUCTOR LAYERS; WIGNER FUNCTIONS;

QUANTUM THEORY;

EID: 44649103775     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.04.025     Document Type: Article

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