50-nm channel nMOSFET/SIMOX with an ultrathin 2- or 6-nm thick silicon layer and their significant features of operations

IEEE Electron Device Letters

Volumn 18, Issue 5, 1997, Pages 190-193

  Omura, Y ^a,b   Kurihara, K ^c   Takahashi, Y ^c   Ishiyama, T ^c   Nakajima, Y ^c   Izumi, K ^a,b  

^a IEEE   (Japan)

^b NTT CORPORATION   (Japan)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

MESOSCOPIC SCALE TRANSISTOR; SEPARATION BY IMPLANTED OXYGEN TECHNOLOGY; SHORT CHANNEL DEVICES;

MOSFET DEVICES;

EID: 0031145794     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.568758     Document Type: Article

References (17)

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