Computationally efficient method for scattering device simulation in nanoscale MOSFETs

Solid-State Electronics

Volumn 51, Issue 5, 2007, Pages 708-713

  Iwata, Hideyuki ^a   Matsuda, Toshihiro ^a   Ohzone, Takashi ^b  

^a TOYAMA PREFECTURAL UNIVERSITY   (Japan)

^b OKAYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

MOSFET; Nanoscale; Non equilibrium green function; Quantum mechanical effect; Scattering

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SCATTERING; SILICON ON INSULATOR TECHNOLOGY;

NON EQUILIBRIUM GREEN FUNCTION (NEGF); QUANTUM MECHANICAL EFFECT; SCATTERING DEVICE SIMULATION;

MOSFET DEVICES;

EID: 34248577017     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.040     Document Type: Article

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