Shrinking limits of silicon MOSFETs: Numerical study of 10 nm scale devices

Superlattices and Microstructures

Volumn 27, Issue 2, 2000, Pages 111-123

  Naveh, Y ^a   Likharev, K K ^a  

^a STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRODES; ELECTRON TUNNELING; ELECTROSTATICS; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; PROBLEM SOLVING; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

NANOELECTRONICS; QUANTUM TUNNELING;

MOSFET DEVICES;

EID: 0033743358     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1999.0807     Document Type: Article

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