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Volumn 93, Issue 2, 2003, Pages 1230-1240

Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; HAMILTONIANS; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SILICON ON INSULATOR TECHNOLOGY;

EID: 0037439312     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1533108     Document Type: Article
Times cited : (19)

References (45)
  • 3
    • 0000409178 scopus 로고
    • [Sov. Phys. JETP 20, 1018 (1965)]
    • L. V. Keldysh, Zh. Eksp. Teor. Fiz. 47, 1515 (1964) [Sov. Phys. JETP 20, 1018 (1965)].
    • (1964) Zh. Eksp. Teor. Fiz. , vol.47 , pp. 1515
    • Keldysh, L.V.1
  • 17
    • 0012841343 scopus 로고
    • C. Jacoboni, Semicond. Sci. Technol. 7, B6 (1992); in Quantum Transport in Semiconductors, edited by D. K. Ferry and C. Jacoboni (Plenum, New York, 1992), p. 1.
    • (1992) Semicond. Sci. Technol , vol.7 , Issue.B6
    • Jacoboni, C.1
  • 33
    • 0012775809 scopus 로고    scopus 로고
    • note
    • Carriers within the active device region are injected either from the source reservoir or the drain reservoir. Both reservoirs are assumed in the equilibrium state, characterized by different Fermi energy levels.
  • 34
    • 0004284520 scopus 로고
    • State University of New York, Buffalo (Academic, New York)
    • A. Isihara, Statistical Physics, State University of New York, Buffalo (Academic, New York, 1971).
    • (1971) Statistical Physics
    • Isihara, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.