Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor

Applied Physics Letters

Volumn 91, Issue 10, 2007, Pages

  Arora, Vijay K ^a,b   Tan, Michael L P ^a   Saad, Ismail ^a   Ismail, Razali ^a  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b WILKES UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; FERMI LEVEL; GATE DIELECTRICS; NANOELECTRONICS; QUANTUM CONFINEMENT;

BALLISTIC SATURATION VELOCITY; CHANNEL MOBILITY; DRAIN VELOCITY; FERMI VELOCITY; GATE OXIDE; QUANTUM TRANSPORT;

MOSFET DEVICES;

EID: 34548483386     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2780058     Document Type: Article

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