Nanoscale FinFET simulation: A quasi-3D quantum mechanical model using NEGF

Solid-State Electronics

Volumn 49, Issue 8, 2005, Pages 1435-1445

  Shao, Xue ^a   Yu, Zhiping ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

3 D simulation; Ballistic; FinFET; NEGF; Quantum effects; Ultra thin channel

Indexed keywords

BALLISTICS; CARRIER CONCENTRATION; COMPUTATIONAL METHODS; COMPUTER SIMULATION; GREEN'S FUNCTION; MATHEMATICAL MODELS; NANOTECHNOLOGY; POISSON DISTRIBUTION; QUANTUM THEORY; WAVE EQUATIONS;

FINFET; NON-EQUILIBRIUM GREEN'S FUNCTION (NEGF); QUANTUM EFFECTS; THREE-DIMENSIONAL (3-D) SIMULATION; ULTRA-THIN CHANNELS;

FIELD EFFECT TRANSISTORS;

EID: 24144502067     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.04.017     Document Type: Article

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