Fabrication of p-type fin field-effect-transistors by solid-phase boron diffusion process using thin film doping sources

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3709-3713

  Cho, Won Ju ^a   Koo, Sang Mo ^a  

^a Kwangwoon University   (South Korea)

Author keywords

Boron; Field effect transistor; Scanning electron microscopy; Solid phase diffusion; Ultra shallow junction

Indexed keywords

BORON; DIFFUSION; DOPING (ADDITIVES); RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

DEVICE SCALABILITY; SOLID PHASE DIFFUSION; THERMAL ANNEALING; ULTRA-SHALLOW JUNCTIONS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 33846922817     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.09.010     Document Type: Article

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