Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2305-2310

  Croitoru, M D ^a,c   Gladilin, V N ^a,c   Fomin, V M ^a,c,d   Devreese, J T ^a,d   Magnus, W ^b   Schoenmaker, W ^b   Soree B ^b  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b IMEC   (Belgium)

^c MOLDOVA STATE UNIVERSITY   (Moldova)

^d EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON SCATTERING; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS; SWITCHING;

BORON ACCEPTORS; MESOSCOPIC SYSTEMS; QUANTUM TRANSPORT; WIGNER FUNCTION;

MOSFET DEVICES;

EID: 4344695687     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767619     Document Type: Article

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