Design and fabrication of asymmetric MOSFETs using a novel self-aligned structure

IEEE Transactions on Electron Devices

Volumn 54, Issue 11, 2007, Pages 2969-2974

  Kim, Jong Pil ^a   Choi, Woo Young ^a,b   Song, Jae Young ^a   Kim, Sang Wan ^a   Lee, Jong Duk ^a   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Asymmetric MOSFET; Lightly doped drain (LDD); Mesa structure; Sidewall spacer gate

Indexed keywords

DRAIN CURRENT; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

LIGHTLY DOPED DRAIN; MESA STRUCTURE; SPACER GATE;

MOSFET DEVICES;

EID: 36248982072     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.906969     Document Type: Article

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