Electrical activation in silicon-on-insulator after low energy boron implantation

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 1891-1898

  Saavedra, Antonio F ^a   Jones, Kevin S ^a   Law, Mark E ^a   Chan, Kevin K ^b   Jones, Erin C ^c  

^a University of Florida   (United States)

^b IBM RESEARCH   (United States)

^c Oregon State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON IMPLANTATION; ELECTRICAL ACTIVATION; SCATTERING FACTORS;

ANNEALING; BORON; CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); HALL EFFECT; ION IMPLANTATION; ISOTHERMS; MATHEMATICAL MODELS; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SUPERSATURATION; THICKNESS MEASUREMENT;

SILICON ON INSULATOR TECHNOLOGY;

EID: 4344645534     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1769095     Document Type: Article

References (52)

1. H.-S. P. Wong, IBM J. Res. Dev. 46, 133 (2002).
2. G. K. Celler and S. Cristoloveanu, J. Appl. Phys. 93, 4955 (2003).
3. J. P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI, 2nd ed. (Kluwer, Boston, 1997). pp. 1-4.
4. S. Cristoloveanu and S. S. Li, Electrical Characterization of Silicon-on-Insulator Materials and Devices, 1st ed. (Kluwer, Boston, 1995), pp. 1-4.
5. A. Plößl and G. Kräuter, Solid-State Electron. 44, 775 (2000).
6. L. Chang, Y.-K. Choi, J. Kedzierski, N. Lindert, P. Xuan, J. Bokor, C. Hu, and T.-J. King, IEEE Circuits Devices Mag. 2003, 35.
7. P. M. Solomon et al., IEEE Circuits Devices Mag. 2003, 48.
8. J. P. Colinge, M. H. Gao, A. Romano, H. Maes, and C. Claeys, Tech. Dig. - Int. Electron Devices Meet. 1990, 353.
9. D. Hisamoto, T. Kaga, and E. Takeda, IEEE Trans. Electron Devices 38, 1419 (1991).
10. M. Ieong and P. Oldiges, Proceedings of International Conference on Simulation of Semiconductor Processes and Devices, 2002, p. 225.
11. H. Park, E. C. Jones, P. Ronsheim, C. Cabral, Jr., C. D'Emic, G. M. Cohen, R. Young, and W. Rausch, Tech. Dig. - Int. Electron Devices Meet. 1999, 337.
12. H.-H. Vuong et al., Appl. Phys. Lett. 75, 1083 (1999).
13. P. Normand, D. Tsoukalas, N. Guillemot, and P. Chenevier, J. Appl. Phys. 66, 3585 (1989).
14. A. Ogura and M. Hiroi, Thin Solid Films 397, 56 (2001).
15. P. Normand, D. Tsoukalas, N. Guillemot, and J. Stoemenos, J. Electrochem. Soc. 137, 2306 (1990).
16. A. K. Robinson, K. J. Reeson. and P. L. F. Hemment, J. Appl. Phys. 68, 4340 (1990).
17. S. W. Crowder, C. J. Hsieh, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 76, 2756 (1994).
18. O. Dokumaci et al., presented at 2002 MRS Spring Meeting, Symp. C, San Francisco, CA.
19. M. Shoji and S. Horiguchi, J. Appl. Phys. 85, 2722 (1999).
20. M. Mastrapasqua, D. Esseni, G. K. Celler, C. Fiegna, L. Selmi, and E. Sangiorgi, Microelectron. Eng. 59, 409 (2001).
21. F. Gamiz, J. A. Lopez-Villanueva, J. B. Roldan, J. E. Carceller, and P. Cartujo, IEEE Trans. Electron Devices 45, 1122 (1998).
22. F. Gamiz and M. V. Fischetti, J. Appl. Phys. 89, 5478 (2001).
23. A. Vandooren, S. Cristoloveanu, D. Flandre, and J. P. Colinge, Solid-State Electron. 45, 1793 (2001).
24. F. Gamiz, J. B. Roldan, J. A. Lopez-Villanueva, P. Cartujo-Cassinello, J. E. Carceller, P. Cartujo, and F. Jimenez-Molinos, Solid-State Electron. 45, 6-13 (2001).
25. UT-MARLOWE Version 5.0, University of Texas-Austin.
26. A. D. Lilak, Ph.D. Dissertation, University of Florida, 2001.
27. Y. Sasaki, K. Itoh, E. Inoue, S. Kishi, and T. Mitsuishi, Solid-State Electron. 31, 5 (1988).
28. D. K. Shroeder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998) p. 100.
29. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jariz, and J. M. Poate, J. Appl. Phys. 81, 6031 (1997).
30. S. Mirabella, E. Bruno, F. Prilo, D. De Salvador. E. Napolitani, A. V. Drigo, and A. Camera, Appl. Phys. Lett. 83, 680 (2003).
31. L. Radic, A. D. Lilak, and M. E. Law, Appl. Phys. Lett. 81, 826 (2002).
32. A. D. Lilak, M. E. Law, L. Radic, K. S. Jones, and M. Clark, Appl. Phys. Lett. 81, 2244 (2002).
33. J. Liu, Ph.D. Dissertation, University of Florida, 1996.
34. G. Mannino, N. E. B. Cowern, F. Roozeboom, and J. G. M. van Berkum, Appl. Phys. Lett. 76, 855 (2000).
35. A. F. Saavedra, A. C. King, K. S. Jones, E. C. Jones, and K. K. Chan, J. Vac. Sci. Technol. B 22, 459 (2004).
36. A. F. Saavedra, J. Frazer, K. S. Jones, I. Avci, S. K. Earles, M. E. Law, and E. C. Jones, J. Vac. Sci. Technol. B 20, 2243 (2002).
37. A. F. Saavedra, K. S. Jones, M. E. Law, and K. K. Chan, J. Electrochem. Soc. 151, G266 (2004).
38. A. F. Saavedra, K. S. Jones, M. E. Law, and K. K. Chan, Mater. Sci. Eng., B 107, 198 (2004).
39. K. Dev, M. Y. L. Jung, R. Gunawan, R. D. Braatz, and E. G. Seebauer, Phys. Rev. B 68, 195311 (2003).
40. R. Kalyanaraman, V. C. Venezia, L. Pelaz, T. E. Haynes, H.-J. L. Gossmann, and C. S. Rafferty, Appl. Phys. Lett. 82, 215 (2003).
41. R. C. Jaegar, Introduction to Microelectronic Fabrication, 2nd ed. (Prentice Hall, Upper Saddle River, NJ, 2002), p. 51.
42. P. Werner, H.-J. Gossmann, D. C. Jacobson, and U. Gösele, Appl. Phys. Lett. 73, 2465 (1998).
43. P. B. Griffin, S. T. Ahn, G. W. Tiller, and J. D. Plummer, Appl. Phys. Lett. 51, 115 (1987).
44. H. Rücker, B. Heinemann, D. Bolze, R. Kurps, D. Krüger, G. Lippert, and H. J. Osten, Appl. Phys. Lett. 74, 3377 (1999).
45. J. D. Plummer, M. D. Deal, and P. B. Griffin, Silicon VLSI Technology: Fundamentals, Practice and Modeling, 1st ed. (Prentice Hall, Upper Saddle River, NJ, 2000), pp. 788-789.
46. Y. Zhao, M. J. Aziz, H.-J. Gossmann, S. Mitha, and D. Shiferi, Appl. Phys. Lett. 74, 31 (1999).
47. M. J. Aziz, Mater. Sci. Semicond. Process. 4, 397 (2001).
48. H. Park, K. S. Jones, J. A. Slinkman, and M. E. Law, J. Appl. Phys. 78, 3664 (1995).
49. Y.-M. Chiang, D. Birnie III, and W. D. Kingery, Physical Ceramics: Principles for Ceramic Science and Engineering, 1st ed. (Wiley, New York, 1997), p. 510.
50. G. G. Stoney, Proc. R. Soc. London A82, 172 (1909).
51. M. Ohring, The Materials Science of Thin Films, 1st ed. (Academic, San Diego, 1992) pp. 416-420.
52. S. M. Hu, J. Appl. Phys. 70, R53 (1991).