Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 409-416

  Mastrapasqua, M ^a   Esseni, D ^b   Celler, G K ^a   Fiegna, C ^c   Selmi, L ^b   Sangiorgi, E ^b  

^a AGERE SYSTEMS   (United States)

^b UNIVERSITY OF UDINE   (Italy)

^c UNIVERSITY OF FERRARA   (Italy)

Author keywords

Low field mobility; Mobility; SOI

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON MOBILITY; HOLE MOBILITY; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; ULTRATHIN FILMS;

PHONON SCATTERING;

MOSFET DEVICES;

EID: 0035498476     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00631-1     Document Type: Conference Paper

References (12)