Electronic structures and phonon-limited electron mobility of double-gate silicon-on-insulator Si inversion layers

Journal of Applied Physics

Volumn 85, Issue 5, 1999, Pages 2722-2731

  Shoji, Masanari ^a   Horiguchi, Seiji ^b  

^a NTT CORPORATION   (Japan)

^b NTT Corporation and CREST of Japan Science and Technology   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001114294     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369589     Document Type: Article

References (28)

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26. even-even,SOI). Consequently, the scattering rate concerning these even and odd subbands (intersubband and intrasubband) for electrons in this even subband of the DG SOI inversion layer is equal to the intrasubband scattering rate for electrons in the corresponding subband in the bulk Si inversion layer. Similar equality of scattering rates can also be obtained for other intersubband scatterings. As a result, the scattering rate of electrons in a subband of a symmetric DG SOI inversion layer is almost equal to that of electrons in the corresponding subband in the corresponding bulk Si inversion layer when the potential barrier is so high for the subband that the overlap of the corresponding bulk Si subband wave functions is sufficiently small.
27. Si and the corresponding bulk Si inversion layer.
28. 2.