Dopant redistribution in SOI during RTA: a study on doping in scaled-down Si Layers

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 337-340

  Park, Heemyong ^a   Jones, Erin C ^a   Ronsheim, Paul ^a   Cabral Jr , Cyril ^a   D'Emic, Chris ^a   Cohen, Guy M ^a   Young, Ralph ^a   Rausch, Werner ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OXIDES; PHOSPHORUS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; X RAY DIFFRACTION ANALYSIS;

BURIED OXIDE; DOPANT DIFFUSION; DOPANT REDISTRIBUTION;

SEMICONDUCTOR DOPING;

EID: 0033345511     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)