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Thin Solid Films

Volumn 397, Issue 1-2, 2001, Pages 56-62

Depth profiles of As and B implanted into Si-on-insulator substrates

(2) Ogura, Atsushi a Hiroi, Masayuki a

a NEC CORPORATION (Japan)

Author keywords

Ion implantation; Secondary ion mass spectrometry (SIMS); Silicon; Transmission electron microscopy (TEM)

Indexed keywords

ANNEALING; ARSENIC; BORON; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

SILICON FILMS;

THIN FILMS;

EID: 0035500213 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01478-X Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.