Kinetics of {3 1 1} defect dissolution in silicon-on-insulator (SOI)

Materials Science and Engineering: B

Volumn 107, Issue 2, 2004, Pages 198-203

  Saavedra, A F ^a   Jones, K S ^a   Law, M E ^a   Chan, K K ^b  

^a University of Florida   (United States)

^b IBM RESEARCH   (United States)

Author keywords

Defect formation; Doping and impurity implantation; Silicon; Silicon on insulator; Solid solid interfaces; Transmission electron microscopy

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; DISSOLUTION; INTERFACES (MATERIALS); ION IMPLANTATION; MICROSTRUCTURE; REACTION KINETICS; SEPARATION; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT FORMATION; DOPING AND IMPURITY IMPLANTATION; SILICON-ON-INSULATOR (SOI); SOLID-SOLID INTERFACES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 1242309845     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.11.004     Document Type: Article

References (21)

1. S. Cristoloveanu, S.S. Li, Electrical Characterization of Silicon-on-Insulator Materials and Devices, first ed., Kluwer Academic Publishers, Boston, 1995, pp. 1-4.
2. Eaglesham D.J., Stolk P.A., Gossmann H.-J., Poate J.M. Appl. Phys. Lett. 65:1994;2305.
3. M.E. Law, K.S. Jones, IEDM Technical Digests (2000) 511.
4. G. Hobler, C.S. Rafferty, S. Senkader, SISPAD (1997) 73.
5. Gencer A.H., Dunham S.T. J. Appl. Phys. 81:1997;631.
6. Rafferty C.S., Gilmer G.H., Jaraiz M., Eaglesham D., Gossmann H.-J. Appl. Phys. Lett. 68:1996;2395.
7. I. Avci, M.E. Law, E. Kuryliw, K.S. Jones, IEDM Technical Digests (2001) 835.
8. H. Park, E.C. Jones, P. Ronsheim, C. Cabral Jr., C. D'Emic, G.M. Cohen, R. Young, W. Rausch, IEDM Technical Digests (1999) 337.
9. Vuong H.-H., Gossmann H.-J., Pelaz L., Celler G.K., Jacobson D.C., Barr D., Hergenrother J., Monroe D., Venezia V.C., Rafferty C.S., Hillenius S.J., McKinley J., Stevie F.A., Granger C. Appl. Phys. Lett. 75:1999;1083.
10. Saavedra A.F., Frazer J., Jones K.S., Avci I., Earles S.K., Law M.E., Jones E.C. J. Vac. Sci. Technol. B. 20:2002;2243.
11. A.F. Saavedra, K.S. Jones, M.E. Law, K.K. Chan, J. Electrochem. Soc., in press.
12. Jain S.C., Schoenmaker W., Lindsay R., Stolk P.A., Decoutere S., Willander M., Maes H.E. J. Appl. Phys. 91:2002;8919.
13. Solmi S., Baruffaldi F., Canteri R. J. Appl. Phys. 69:1991;2135.
14. Li J., Keys P., Chen J., Law M.E., Jones K.S., Jasper C. Mater. Res. Soc. Symp. Proc. 568:1999;175.
15. UT-Marlowe Version 5.0, University of Texas, Austin.
16. J.F. Ziegler, SRIM, 2000.
17. Jones K.S., Prussin S., Weber E.R. Appl. Phys. A. 45:1988;1.
18. Li J., Jones K.S. Appl. Phys. Lett. 73:1998;3748.
19. Coffa S., Libertino S., Spinella C. Appl. Phys. Lett. 76:2000;321.
20. Hu S.M. Mater. Sci. Eng. R. 13:1994;105.
21. King A.C., Gutierrez A.F., Saavedra A.F., Jones K.S. J. Appl. Phys. 93:2003;203.