Influence of the surface Si/buried oxide interface on extended defect evolution in silicon-on-insulator scaled to 300 Å

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2243-2247

  Saavedra, A F ^a   Frazer, J ^a   Jones, K S ^a   Avci, I ^a   Earles, S K ^a   Law, M E ^a   Jones, E C ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISSOLUTION; INTERFACES (MATERIALS); ION IMPLANTATION; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

BURIED OXIDE; METAL OXIDE SEMICONDUCTOR TECHNOLOGY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036883231     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1517410     Document Type: Article

References (24)

1. J. P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI, 2nd ed. (Kluwer Academic, Boston, MA, 1997), pp. 1-4.
2. H. J. Hovel, Proceedings of the IEEE International SOI Conference (1996), p. 1.
3. A. F. Saavedra, J. Frazer, D. Wrigley, K. S. Jones, I. Avci, S. K. Earles, M. E. Law, and E. C. Jones, Mater. Res. Soc. Symp. Proc. 717, 95 (2002).
4. H. Park, E. C. Jones, P. Ronsheim, C. Cabral, Jr., C. D'Emic, G. M. Cohen, R. Young, and W. Rausch, Tech. Dig. - Int. Electron Devices Meet. 337 (1999).
5. H. Uchida, Y. Ieki, M. Ichimura, and E. Arai, Jpn. J. Appl. Phys., Part 2 39, L137 (2000).
6. H.-H. Vuong, H.-J. Gossmann, L. Pelaz, G. K. Celler, D. C. Jacobson, D. Barr, J. Hergenrother, D. Monroe, V. C. Benezia, C. S. Rafferty, S. J. Hillenius, J. McKinley, F. A. Stevie, and C. Granger, Appl. Phys. Lett. 75, 1083 (1999).
7. S. W. Crowder, C. J. Hsieh, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 76, 2756 (1994).
8. E. C. Jones and E. Ishida, Mater. Sci. Eng., R. 24, 1 (1998).
9. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997).
10. D. J. Eaglesham, P. A. Stolk, H.-J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 65, 2305 (1994).
11. A. Agarwal, T. E. Haynes, D. J. Eaglesham, H.-J. Gossmann, D. C. Jacobson, J. M. Poate, and Yu. E. Erokhin, Appl. Phys. Lett. 70, 3332 (1997).
12. D. R. Lim, C. S. Rafferty, and F. P. Klemens, Appl. Phys. Lett. 67, 2302 (1995).
13. H. Saleh, M. E. Law, S. Bharatan, K. S. Jones, V. Krishnamoorthy, and T. Buyuklimanli, Appl. Phys. Lett. 77, 112 (2000).
14. K. Moller, K. S. Jones, and M. E. Law, Appl. Phys. Lett. 72, 2547 (1998).
15. M. Omri, C. Bonafos, A. Claverie, A. Nejim, F. Cristiano, D. Alquier, A. Martinez, and N. E. B. Cowern, Nucl. Instrum. Methods Phys. Res. B 120, 5 (1996).
16. A. C. King, A. F. Gutierrez, A. F. Saavedra, and K. S. Jones, J. Appl. Phys. (submitted).
17. S. T. Dunham, J. Appl. Phys. 71, 685 (1992).
18. M. E. Law, Y. M. Haddara, and K. S. Jones, J. Appl. Phys. 84, 3555 (1998).
19. M. E. Law, IEEE Trans. Comput.-Aided Des. 10, 1125 (1991).
20. D. Tsoukalas, C. Tsamis, and J. Stoemenos, Appl. Phys. Lett. 63, 3167 (1993).
21. G. K. Celler and L. E. Trimble, Appl. Phys. Lett. 54, 1427 (1989).
22. S T. Ahn, H. W. Kennel, W. A. Tiller, and J. D. Plummer, J. Appl. Phys. 65, 2957 (1989).
23. G. K. Celler and L. E. Trimble, Appl. Surf. Sci. 39, 245 (1989).
24. M. Bruel, B. Aspar, and A.-J. Auberton-Herve, Jpn. J. Appl. Phys., Part 1 36, 1636 (1997).